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26 Apr 2010

Volume 96, Issue 17, Articles (17xxxx)

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Appl. Phys. Lett. 96, 173501 (2010); http://dx.doi.org/10.1063/1.3409475 (3 pages)

Seoung-Ki Lee, Houk Jang, Musarrat Hasan, Jae Bon Koo, and Jong-Hyun Ahn
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Role of oxygen vacancies in HfO2-based gate stack breakdown

X. Wu, D. B. Migas, X. Li, M. Bosman, N. Raghavan, V. E. Borisenko, and K. L. Pey

Appl. Phys. Lett. 96, 172901 (2010); http://dx.doi.org/10.1063/1.3416912 (3 pages) | Cited 12 times

Online Publication Date: 28 April 2010

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We study the influence of multiple oxygen vacancy traps in the percolated dielectric on the postbreakdown random telegraph noise (RTN) digital fluctuations in HfO2-based metal-oxide-semiconductor transistors. Our electrical characterization results indicate that these digital fluctuations are triggered only beyond a certain gate stress voltage. First-principles calculations suggest the oxygen vacancies to be responsible for the formation of a subband in the forbidden band gap region, which affects the triggering voltage (VTRIG) for the RTN fluctuations and leads to a shrinkage of the HfO2 band gap.
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85.30.Tv Field effect devices
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