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26 Apr 2010

Volume 96, Issue 17, Articles (17xxxx)

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Appl. Phys. Lett. 96, 173501 (2010); http://dx.doi.org/10.1063/1.3409475 (3 pages)

Seoung-Ki Lee, Houk Jang, Musarrat Hasan, Jae Bon Koo, and Jong-Hyun Ahn
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Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating

Yu-Lian Cao (曹玉莲), Tao Yang (杨涛), Peng-Fei Xu (徐鹏飞), Hai-Ming Ji (季海铭), Yong-Xian Gu (谷永先), Xiao-Dong Wang (王晓东), Qing Wang (王青), Wen-Quan Ma (马文全), and Liang-Hui Chen (陈良惠)

Appl. Phys. Lett. 96, 171101 (2010); http://dx.doi.org/10.1063/1.3418647 (3 pages) | Cited 1 time

Online Publication Date: 26 April 2010

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In this letter, we present a facet coating design to delay the excited state (ES) lasing for 1310 nm InAs/GaAs quantum dot lasers. The key point of our design is to ensure that the mirror loss of ES is larger than that of the ground state by decreasing the reflectivity of the ES. In the facet coating design, the central wavelength is at 1480 nm, and the high- and low-index materials are Ta2O5 and SiO2, respectively. Compared with the traditional Si/SiO2 facet coating with a central wavelength of 1310 nm, we have found that with the optimal design the turning temperature of the ES lasing has been delayed from 90 to 100 °C for the laser diodes with cavity length of 1.2 mm. Furthermore, the characteristic temperature (T0) of the laser diodes is also improved.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking

Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures

Chong Qi Yu and Hui Wang

Appl. Phys. Lett. 96, 171102 (2010); http://dx.doi.org/10.1063/1.3419903 (3 pages) | Cited 2 times

Online Publication Date: 27 April 2010

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The operating frequencies of current position-sensitive detectors (PSDs) based on lateral photovoltaic effect (LPE) are mainly concentrated in the visible or ultraviolet region. Here we report a remarkable near-infrared-sensitive LPE in nanoscale metal-semiconductor structures of Co/Si. We show that by manipulating the Co thickness, the optimum light wavelength for obtaining the largest LPE in such Co/Si structures can be controlled in infrared region. Besides, the observed lateral photovoltage position sensitivity of 82 mV/mm at 832 nm light wavelength in Co(3.5 nm)/Si is considerably large, suggesting this simple structure a potential candidate for infrared-sensitive PSDs.
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72.40.+w Photoconduction and photovoltaic effects
78.30.-j Infrared and Raman spectra
78.40.-q Absorption and reflection spectra: visible and ultraviolet
61.46.-w Structure of nanoscale materials

Porous silicon structures for low-cost diffraction-based biosensing

Judson D. Ryckman, Marco Liscidini, J. E. Sipe, and S. M. Weiss

Appl. Phys. Lett. 96, 171103 (2010); http://dx.doi.org/10.1063/1.3421545 (3 pages) | Cited 9 times

Online Publication Date: 28 April 2010

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We present a strategy for label-free biosensing using porous silicon diffraction gratings. The gratings are fabricated using a cost-effective, high-throughput stamping technique. Unlike traditional diffraction-based biosensors that rely on microcontact printing or lithography to create gratings for the localization of analytes on the top surface of the grating, in our structure analytes are free to infiltrate the porous network and increase the effective refractive index of the grating. The large surface area of porous silicon available for molecular binding offers the potential for enhanced diffraction response compared to nonporous gratings with limited surface area. Small molecule detection of 3-aminopropyltriethoxysilane is demonstrated.
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87.80.-y Biophysical techniques (research methods)
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.79.Dj Gratings

Switching operation of lasing wavelength in mid-infrared ridge-waveguide quantum cascade lasers coupled with microcylindrical cavity

Y. Wakayama, S. Iwamoto, and Y. Arakawa

Appl. Phys. Lett. 96, 171104 (2010); http://dx.doi.org/10.1063/1.3413949 (3 pages) | Cited 3 times

Online Publication Date: 29 April 2010

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We demonstrated switching operation of lasing wavelength in GaAs-based mid-infrared coupled-cavity quantum cascade lasers. Our cavity structures consist of a ridge-waveguide Fabry–Perot cavity coupled with a microcylindrical cavity. Individual control of currents injected into both cavities enabled single-mode operation and facilitated intentional mode switching between coupled-cavity modes with spacing over 120 nm. The integrated microcylindrical cavity expanded the separation of coupled-cavity modes due to the small size of the cavity and enabled switching the lasing wavelength over a wide spectral range.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.55.Sa Microcavity and microdisk lasers
42.82.Bq Design and performance testing of integrated-optical systems
42.60.By Design of specific laser systems

A multilevel recording method of phase-change materials

Chaoyu Xiang and Lih-Hsin Chou

Appl. Phys. Lett. 96, 171105 (2010); http://dx.doi.org/10.1063/1.3409118 (3 pages)

Online Publication Date: 30 April 2010

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In this letter, a method of using ellipsometer parameters to analyze the phase-change material effects of polarized light is exhibited theoretically. The potential usage of polarized light on phase-change materials for information recording is demonstrated by calculating the polarized reflective light angle difference between amorphous and crystalline phases of Te doped GeSb9 films based on this exhibited theory from the ellipsometer data.
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42.79.Vb Optical storage systems, optical disks
42.79.Wc Optical coatings
42.70.Ln Holographic recording materials; optical storage media

Lensfree on-chip imaging using nanostructured surfaces

Bahar Khademhosseinieh, Ikbal Sencan, Gabriel Biener, Ting-Wei Su, Ahmet F. Coskun, Derek Tseng, and Aydogan Ozcan

Appl. Phys. Lett. 96, 171106 (2010); http://dx.doi.org/10.1063/1.3405719 (3 pages) | Cited 5 times

Online Publication Date: 30 April 2010

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We introduce the use of nanostructured surfaces for lensfree on-chip microscopy. In this incoherent on-chip imaging modality, the object of interest is directly positioned onto a nanostructured thin metallic film, where the emitted light from the object plane, after being modulated by the nanostructures, diffracts over a short distance to be sampled by a detector-array without the use of any lenses. The detected far-field diffraction pattern then permits rapid reconstruction of the object distribution on the chip at the subpixel level using a compressive sampling algorithm. This imaging modality based on nanostructured substrates could especially be useful to create lensfree fluorescent microscopes on a compact chip.
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87.85.Rs Nanotechnologies-applications
87.64.M- Optical microscopy
87.63.L- Visual imaging
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