• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Appl. Phys. Lett. 96, 181103 (2010); http://dx.doi.org/10.1063/1.3425663 (3 pages)

Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction

Bryan Ellis1, Tomas Sarmiento2, Marie Mayer3, Bingyang Zhang1, James Harris2, Eugene Haller3, and Jelena Vuckovic1

1Edward L. Ginzton Laboratory, Stanford, California 94305, USA
2Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
3Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA and Department of Materials Science, University of California, Berkeley, Berkeley, California 94720, USA

View MapView Map

(Received 25 January 2010; accepted 12 April 2010; published online 4 May 2010)

A technique to electrically pump photonic crystal nanocavities using a lateral p-i-n junction is described. Ion implantation doping is used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated and the electrical characteristics of the diode are presented. The fabrication improvements necessary for making an electrically pumped nanocavity laser using a lateral junction are discussed.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

PACS

  • 42.55.Tv

    Photonic crystal lasers and coherent effects

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.72.-g

    Optical sources and standards

  • 42.82.-m

    Integrated optics

  • 42.60.By

    Design of specific laser systems

  • 42.70.Qs

    Photonic bandgap materials

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    S. Strauf, K. Hennessy, M. Rakher, Y. Choi, A. Badolato, L. Andreani, E. Hu, P. Petroff, and D. Bouwmeester, Phys. Rev. Lett. 96, 127404 (2006).

    K. Nozaki, H. Watanabe, and T. Baba, Appl. Phys. Lett. 92, 021108 (2008)APPLAB000092000002021108000001.

    M. Francardi, L. Balet, A. Gerardino, N. Chauvin, D. Bitauld, L. H. Li, B. Alloing, and A. Fiore, Appl. Phys. Lett. 93, 143102 (2008)APPLAB000093000014143102000001.

    S. Reitzenstein, T. Heindel, C. Kistner, A. Rahimi-Iman, C. Schneider, S. Hofling, and A. Forchel, Appl. Phys. Lett. 93, 061104 (2008)APPLAB000093000006061104000001.

    S. Malik, C. Roberts, R. Murray, and M. Pate, Appl. Phys. Lett. 71, 1987 (1997)APPLAB000071000014001987000001.

    B. Ellis, I. Fushman, D. Englund, B. Zhang, Y. Yamamoto, and J. Vuckovic, Appl. Phys. Lett. 90, 151102 (2007)APPLAB000090000015151102000001.

    A. Berrier, M. Mulot, G. Malm, M. Ostling, and S. Anand, J. Appl. Phys. 101, 123101 (2007)JAPIAU000101000012123101000001.


For access to citing articles, you need to log in.


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close
Google Calendar
ADVERTISEMENT

close