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Applied Physics Letters / Volume 96 / Issue 18 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 181107 (2010); http://dx.doi.org/10.1063/1.3424789 (3 pages)

Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy

B. Adnane, K. F. Karlsson, G. V. Hansson, P. O. Holtz, and W.-X. Ni

Department of Physics, Chemistry, and Biology, Linköping University, S-581 83 Linköping, Sweden

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(Received 21 December 2009; accepted 9 April 2010; published online 6 May 2010)

Well-resolved photoluminescence excitation (PLE) spectra are reported for self-assembled GeSi dots grown on Si(001) by molecular beam epitaxy. The observation of two excitation resonance peaks is attributed to two different excitation/de-excitation routes of interband optical transitions connected to the spatially direct and indirect recombination processes. It is concluded that two dot populations are addressed by each monitored luminescence energy for the PLE acquisition.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

Ge-Si alloys, luminescence, molecular beam epitaxial growth, self-assembly, semiconductor quantum dots

PACS

  • 81.07.Ta

    Quantum dots

  • 78.67.Hc

    Quantum dots

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 78.60.-b

    Other luminescence and radiative recombination

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3424789

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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