Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN

Cho, Chu-Young; Kang, Se-Eun; Kim, Ki Seok; Lee, Sang-Jun; Choi, Yong-Seok; Han, Sang-Heon; Jung, Gun-Young; Park, Seong-Ju

doi:doi:10.1063/1.3427352

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Peculiar features of confinement factors in a metal-semiconductor waveguide

The concept of confinement factor (CF) is analyzed for a metal-semiconductor-metal (MSM) waveguide near the surface plasmon resonance. We show that the CF is inversely proportional to the average energy velocity, and thus can be enhanced by the slowing down of energy propagation. This slowing down in the MSM waveguide results in a value of CF as high as 105, as opposed to a value of smaller than 1 in a typically dielectric structure. Contrary to the CF in pure dielectric waveguide where it is i...

Nonlinear frequency coupling in dual radio-frequency driven atmospheric pressure plasmas

Plasma ionization, and associated mode transitions, in dual radio-frequency driven atmospheric pressure plasmas are governed through nonlinear frequency coupling in the dynamics of the plasma boundary sheath. Ionization in low-power mode is determined by the nonlinear coupling of electron heating and the momentary local plasma density. Ionization in high-power mode is driven by electron avalanches during phases of transient high electric fields within the boundary sheath. The transition between...

We report on the properties of green light-emitting diodes (LEDs) with a photonic crystal (PC) structure on p-GaN. A PC structure was fabricated by the selective area epitaxy of p-GaN using SiO₂ nanopillars. The electrical characteristics of LEDs with PC were not degraded and the optical output power of green LEDs with PC was increased by 70% at 20 mA of injection current compared with that of conventional LEDs without PC. This enhancement of optical output power was attributed to the improvement in light extraction efficiency by the SiO₂/p-GaN PC layer on p-GaN.

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KEYWORDS and PACS

Keywords

epitaxial growth, gallium compounds, III-V semiconductors, light emitting diodes, MOCVD coatings, photonic crystals, silicon compounds, wide band gap semiconductors

PACS

85.60.Jb

Light-emitting devices
42.70.Qs

Photonic bandgap materials
81.15.Gh

Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3427352

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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