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Applied Physics Letters / Volume 96 / Issue 18 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 96, 181901 (2010); http://dx.doi.org/10.1063/1.3421535 (3 pages)

Suppression of concentration quenching of Er-related luminescence in Er-doped GaN

Shaoqiang Chen1, Benjamin Dierre2, Woong Lee2, Takashi Sekiguchi2, Shigeo Tomita1, Hiroshi Kudo1, and Katsuhiro Akimoto1

1Institute of Applied Physics, University of Tsukuba, Tennodai 1-1-1, Tsukuba, Ibaraki 305-8573, Japan
2Advanced Electronic Materials Center, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan

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(Received 10 February 2010; accepted 11 April 2010; published online 3 May 2010)

Erbium-doped GaN with different doping concentrations were grown by ammonia-source molecular beam epitaxy. The intra-4f-shell transitions related green luminescence were observed by both photoluminescence (PL) and cathodoluminescence (CL) measurements. It was found that concentration quenching of Er-related luminescence was observed in PL measurements while not in CL measurements. The different excitation and relaxation processes are suggested as the cause of the concentration quenching characteristics between PL and CL. The strong Er-related CL intensity in highly doped GaN demonstrates that high energy excitation is a promising approach to suppress the concentration quenching in Er-doped GaN.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

cathodoluminescence, erbium, gallium compounds, III-V semiconductors, luminescence, molecular beam epitaxial growth

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3421535

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. Sawahata, J. Seo, S. Chen, M. Takiguchi, D. Saito, S. Nemoto, and K. Akimoto, Appl. Phys. Lett. 89, 192104 (2006)APPLAB000089000019192104000001.

    R. Birkhahn and A. J. Steckl, Appl. Phys. Lett. 73, 2143 (1998)APPLAB000073000015002143000001.

    H. Bang, S. Morishima, J. Sawahata, J. Seo, M. Takiguchi, M. Tsunemi, and K. Akimoto, Appl. Phys. Lett. 85, 227 (2004)APPLAB000085000002000227000001.

    D. S. Lee, J. Heikenfeld, A. J. Steckl, U. Hommerich, J. T. Seo, A. Braud, and J. Zavada, Appl. Phys. Lett. 79, 719 (2001)APPLAB000079000006000719000001.

    A. Uedono, C. Shaoqiang, S. Jongwon, K. Ito, H. Nakamori, N. Honda, S. Tomita, K. Akimoto, H. Kudo, and S. Ishibashi, J. Appl. Phys. 103, 104505 (2008)JAPIAU000103000010104505000001.

    J. -S. Filhol, R. Jones, M. J. Shaw, and P. R. Briddon, Appl. Phys. Lett. 84, 2841 (2004)APPLAB000084000015002841000001.

    K. H. Yang and J. A. Deluca, Phys. Rev. B 17, 4246 (1978).

    R. T. Wegh, H. Donker, and A. Meijerink, Phys. Rev. B 57, R2025 (1998).


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