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Appl. Phys. Lett. 96, 181902 (2010); http://dx.doi.org/10.1063/1.3420080 (3 pages)
Ellipsometric study of single-crystal γ-InSe from 1.5 to 9.2 eV
(Received 4 January 2010; accepted 9 April 2010; published online 6 May 2010)
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of the pseudodielectric-function tensor 〈ε(E)〉 = 〈ε1(E)〉+i〈ε2(E)〉 of γ-phase single-crystal InSe, obtained from 1.5 to 9.2 eV by vacuum-ultraviolet spectroscopic ellipsometry with the sample at room temperature. Overlayer artifacts were reduced as far as possible by measuring fresh surfaces prepared by cleavage. Accurate critical-point energies of observed structures were obtained by a combined method of spectral analysis.© 2010 American Institute of Physics
RELATED DATABASES
KEYWORDS and PACS
Keywords
critical points, dielectric function, ellipsometry, III-VI semiconductors, indium compounds, Kramers-Kronig relations, optical films, ultraviolet spectra
PACS
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Other semiconductors
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Other semiconductors
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Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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Permittivity (dielectric function)
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Exchange, correlation, dielectric and magnetic response functions, plasmons
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Semiconductors
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