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Appl. Phys. Lett. 96, 181904 (2010); http://dx.doi.org/10.1063/1.3428368 (3 pages)

Investigation of E1(LO) phonon-plasmon coupled modes and critical points in In1−xGaxN thin films by optical reflectance measurements

J. S. Thakur1, A. Dixit1, Y. V. Danylyuk2, C. Sudakar1, V. M. Naik3, W. J. Schaff4, and R. Naik1

1Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48202, USA
2Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202, USA
3Department of Natural Sciences, University of Michigan–Dearborn, Dearborn, Michigan 48128, USA
4Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14583, USA

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(Received 8 February 2010; accepted 15 April 2010; published online 6 May 2010)

Low energy optical modes of molecular beam epitaxy-grown In1−xGaxN thin films with 0 ≤ x ≤ 0.6 are investigated using infrared reflectance measurements. We found that the reflectance of the films for wave vectors in the range from 600 to 800 cm−1 is determined by the high energy E1(LO)-plasmon coupled modes. In the higher energy regime of the UV-visible reflectance spectrum of InN, critical points with energies 4.75, 5.36, and 6.12 eV belonging to A and B structures are observed. The energies of these critical points increase with increasing values of x, similar to the band gap energy of these films.

© 2010 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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