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Applied Physics Letters / Volume 96 / Issue 18 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 96, 181907 (2010); http://dx.doi.org/10.1063/1.3427310 (3 pages)

Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11−22) InGaN layers

A. Das1, S. Magalhães2, Y. Kotsar1, P. K. Kandaswamy1, B. Gayral1, K. Lorenz2, E. Alves2, P. Ruterana3, and E. Monroy1

1CEA/CNRS group “Nanophysique et semiconducteurs,” INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
2Unidade de Física e Aceleradores, Instituto Tecnológico e Nuclear, Estrada Nacional 10, P-2686-953 Sacavem, Portugal
3CIMAP, UMR 6252 CNRS-ENSICAEN, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France

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(Received 22 March 2010; accepted 15 April 2010; published online 7 May 2010)

We report on the growth kinetics of semipolar (11−22) InGaN layers by plasma-assisted molecular beam epitaxy. Similarly to (0001)-oriented InGaN, optimum growth conditions for this crystallographic orientation correspond to the stabilization of two atomic layers of In on the growing InGaN surface, and the limits of this growth window in terms of substrate temperature and In flux lie at same values for both polar and semipolar material. However, in semipolar samples, the incorporation of In is inhibited, even for growth temperatures within the Ga-limited regime of polar InGaN growth.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

crystal orientation, gallium compounds, III-V semiconductors, indium compounds, molecular beam epitaxial growth, plasma deposition, polar semiconductors, semiconductor epitaxial layers, semiconductor growth, wide band gap semiconductors

PACS

  • 81.05.Ea

    III-V semiconductors

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 52.77.Dq

    Plasma-based ion implantation and deposition

  • 68.55.ag

    Semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3427310

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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