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Appl. Phys. Lett. 96, 181908 (2010); http://dx.doi.org/10.1063/1.3428577 (3 pages)

In-plane thermal and thermoelectric properties of misfit-layered [(PbSe)0.99]x(WSe2)x superlattice thin films

Anastassios Mavrokefalos1, Qiyin Lin2, Matthew Beekman2, Jae Hun Seol1, Yong J. Lee1, Huijun Kong1, Michael T. Pettes1, David C. Johnson2, and Li Shi1

1Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, USA
2Department of Chemistry, Materials Science Institute, University of Oregon, Eugene, Oregon 97403, USA

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(Received 3 January 2010; accepted 19 April 2010; published online 7 May 2010)

The in-plane thermal conductivity is measured to be three times lower in misfit-layered [(PbSe)0.99]x(WSe2)x superlattice thin films than disordered-layered WSe2 because of interface scattering despite a higher cross-plane value in the former than the latter. While having little effect on the in-plane thermal conductivity, annealing the p-type [(PbSe)0.99]2(WSe2)2 films in Se increases the in-plane Seebeck coefficient and electrical conductivity because of decreased defect and hole concentrations. Increasing interface density of the annealed films by decreasing x from 4 to 2 has weak influence on the in-plane thermal conductivity but increases the Seebeck coefficient and decreases the room-temperature electrical conductivity.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 73.61.Le

    Other inorganic semiconductors

  • 68.55.ag

    Semiconductors

  • 72.80.Jc

    Other crystalline inorganic semiconductors

  • 66.70.-f

    Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

  • 72.20.Pa

    Thermoelectric and thermomagnetic effects

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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