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Applied Physics Letters / Volume 96 / Issue 18 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 182101 (2010); http://dx.doi.org/10.1063/1.3422477 (3 pages)

Microscopic studies of metal-induced lateral crystallization in SiGe

Masaru Itakura1, Shunji Masumori1, Noriyuki Kuwano2, Hiroshi Kanno3, Taizoh Sadoh3, and Masanobu Miyao3

1Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
2Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
3Department of Electronics, Kyushu University, Motooka, Fukuoka 819-0395, Japan

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(Received 15 December 2009; accepted 4 February 2010; published online 4 May 2010)

Metal-induced lateral crystallization (MILC) in amorphous SiGe films on insulating substrates is an important technique for future thin-film-transistor fabrication. Growth features of low and/or high temperature MILC have been investigated based on the microscopic crystal observation. In the initial stage of MILC, precipitation of hemispherical Ni(Si,Ge) with orthorhombic structure is found at the growth front. This leads to the formation of long needlelike SiGe crystallites. And then, the spontaneous nucleation and growth of SiGe take place around the needlelike crystals, resulting in long rod-shaped SiGe crystals. In this way, the role of Ge atoms on MILC is clarified.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

amorphous semiconductors, crystal microstructure, crystallisation, crystallites, Ge-Si alloys, nickel, nucleation, precipitation, semiconductor growth, semiconductor thin films, transmission electron microscopy

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3422477

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. Miyao, I. Tsunoda, T. Sadoh, and A. Miyauchi, J. Appl. Phys. 97, 054909 (2005)JAPIAU000097000005054909000001.

    Z. Jin, G. A. Bhat, M. Yeung, H. S. Kwok, and M. Wong, J. Appl. Phys. 84, 194 (1998)JAPIAU000084000001000194000001.

    M. Miyasaka, K. Makihira, T. Asano, E. Polychroniadis, and J. Stoemenos, Appl. Phys. Lett. 80, 944 (2002)APPLAB000080000006000944000001.

    C. Hayzelden and J. L. Batstone, J. Appl. Phys. 73, 8279 (1993)JAPIAU000073000012008279000001.

    J. Jang, S. J. Park, K. H. Kim, B. R. Cho, W. K. Kwak, and S. Y. Yoon, J. Appl. Phys. 88, 3099 (2000)JAPIAU000088000005003099000001.

    H. Kanno, I. Tsunoda, A. Kenjo, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 82, 2148 (2003)APPLAB000082000013002148000001.

    H. Kanno, K. Toko, T. Sadoh, and M. Moyao, Appl. Phys. Lett. 89, 182120 (2006)APPLAB000089000018182120000001.

    C. -W. Hwang, M. -K. Ryu, K. -B. Kim, S. -C. Lee, and C. -S. Kim, J. Appl. Phys. 77, 3042 (1995)JAPIAU000077000007003042000001.


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