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Applied Physics Letters / Volume 96 / Issue 18 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 182102 (2010); http://dx.doi.org/10.1063/1.3425666 (3 pages)

Sulfur gradient-driven Se diffusion at the CdS/CuIn(S,Se)2 solar cell interface

L. Weinhardt1, M. Bär2,3, S. Pookpanratana2, M. Morkel1, T. P. Niesen4, F. Karg4, K. Ramanathan5, M. A. Contreras5, R. Noufi5, E. Umbach1,6, and C. Heske2

1Experimentelle Physik II, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
2Department of Chemistry, University of Nevada, Las Vegas (UNLV), 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003, USA
3Solar Energy Research, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany
4AVANCIS GmbH & Co. KG, Otto-Hahn-Ring 6, 81739 München, Germany
5National Renewable Energy Laboratory (NREL), 1617 Cole Boulevard, Golden, Colorado 80401, USA
6Karlsruhe Institute of Technology, D-76021 Karlsruhe, Germany

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(Received 28 January 2010; accepted 9 April 2010; published online 4 May 2010)

The diffusion behavior of Se at the CdS/Cu(In,Ga)(S,Se)2 thin film solar cell interface was investigated by x-ray photoelectron spectroscopy and x-ray excited Auger electron spectroscopy. Buffer/absorber structures with S/Se ratios between zero and three at the initial Cu(In,Ga)(S,Se)2 surface were analyzed. Samples from a high-efficiency laboratory process (NREL) as well as from an industrial large-area process (AVANCIS) were investigated. We find selenium diffusion into the CdS buffer layer, the magnitude of which strongly depends on the S content at the absorber surface. The associated modification of the heterojunction partners has significant impact on the electronic structure at the interface.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

Auger electron spectra, buffer layers, cadmium compounds, copper compounds, diffusion, electronic structure, gallium compounds, II-VI semiconductors, indium compounds, interface states, semiconductor thin films, solar cells, sulphur compounds, ternary semiconductors, thin film devices, X-ray photoelectron spectra

PACS

  • 88.40.jm

    Thin film III-V and II-VI based solar cells

  • 82.80.Pv

    Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3425666

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. Morkel, L. Weinhardt, B. Lohmüller, C. Heske, E. Umbach, W. Riedl, S. Zweigart, and F. Karg, Appl. Phys. Lett. 79, 4482 (2001)APPLAB000079000027004482000001.

    C. Heske, D. Eich, R. Fink, E. Umbach, S. Kakar, T. van Buuren, C. Bostedt, L. J. Terminello, M. M. Grush, T. A. Callcott, F. J. Himpsel, D. L. Ederer, R. C. C. Perera, W. Riedl, and F. Karg, Appl. Phys. Lett. 75, 2082 (1999)APPLAB000075000014002082000001.

    T. Nakada and A. Kunioka, Appl. Phys. Lett. 74, 2444 (1999)APPLAB000074000017002444000001.

    Y. L. Soo, S. Huang, Y. H. Kao, S. K. Deband, K. Ramanathan, and T. Takizawa, J. Appl. Phys. 86, 6052 (1999)JAPIAU000086000011006052000001.

    C. Heske, D. Eich, R. Fink, E. Umbach, T. van Buuren, C. Bostedt, L. J. Terminello, S. Kakar, M. M. Grush, T. A. Callcott, F. J. Himpsel, D. L. Ederer, R. C. C. Perera, W. Riedl, and F. Karg, Appl. Phys. Lett. 74, 1451 (1999)APPLAB000074000010001451000001.


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