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Applied Physics Letters / Volume 96 / Issue 18 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 182105 (2010); http://dx.doi.org/10.1063/1.3427408 (3 pages)

High thermal stability and low electrical resistivity carbon-containing Cu film on barrierless Si

L. F. Nie1, X. N. Li1, J. P. Chu2, Q. Wang1, C. H. Lin3, and C. Dong1

1Key Laboratory of Materials Modification by Laser, Ion and Electron Beams—Ministry of Education, Dalian University of Technology, Dalian 116024, People's Republic of China
2Department of Polymer Engineering and Graduate Institute of Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
3Department of Electronic Materials, Chin-Min Institute of Technology, Tou-Fen 35153, Taiwan

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(Received 9 December 2009; accepted 16 April 2010; published online 7 May 2010)

Interfacial structures and electrical resistivities of a carbon-doped Cu film at different annealing temperatures and times were investigated. The film was prepared by magnetron sputtering on barrierless silicon. After annealing, grain growth was distinctly hindered and a carbon-containing nanometer thick passive amorphous layer was formed at the film/substrate interface. The film had a resistivity of about 2.7 μΩ cm after annealing at 400 °C for 1 h and maintained a low resistivity of 3.8 μΩ cm even after 9 h annealing at 400 °C. The low electrical resistivity in combination with the high thermal stability makes carbon doping a promising technique for future Cu interconnects on barrierless Si.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, carbon, copper alloys, doping, electrical resistivity, grain growth, metallic thin films, sputter deposition, thermal stability

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3427408

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. Koike and M. Wada, Appl. Phys. Lett. 87, 041911 (2005)APPLAB000087000004041911000001.

    J. P. Chu, C. H. Lin, and V. S. John, Appl. Phys. Lett. 91, 132109 (2007)APPLAB000091000013132109000001.

    J. P. Chu and C. H. Lin, Appl. Phys. Lett. 87, 211902 (2005)APPLAB000087000021211902000001.

    T. N. Arunagiri, Y. Zhang, O. Chyan, M. El-Bouanani, M. J. Kim, K. H. Chen, C. T. Wu, and L. C. Chen, Appl. Phys. Lett. 86, 083104 (2005)APPLAB000086000008083104000001.


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