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Appl. Phys. Lett. 96, 182501 (2010); http://dx.doi.org/10.1063/1.3377908 (3 pages)

Giant magnetoelectric coefficients in (Fe90Co10)78Si12B10-AlN thin film composites

Henry Greve1, Eric Woltermann1, Hans-Joachim Quenzer2, Bernhard Wagner2, and Eckhard Quandt1

1Inorganic Functional Materials, Institute for Materials Science, Christian-Albrechts-University, Kaiserstrasse 2, D-24143 Kiel, Germany
2Microsystems Technology, Fraunhofer Institute for Silicon Technology ISIT, Fraunhoferstr. 1, D-25524 Itzehoe, Germany

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(Received 18 February 2010; accepted 1 March 2010; published online 3 May 2010)

Thin film magnetoelectric (ME) two–two composites consisting of AlN and amorphous (Fe90Co10)78Si12B10 layers were fabricated by magnetron sputtering on Si (100) substrates. Upon magnetic field annealing they show an extremely high ME coefficient of 737 V/cm Oe at mechanical resonance at 753 Hz and 3.1 V/cm Oe out of resonance at 100 Hz. These are the highest reported ME coefficients in thin film composites ever. Furthermore, the induced magnetic anisotropy by field annealing serves the possibility to obtain a sensor element with a pronounced sensitivity in only one dimension, which allows the realization of a three-dimensional vector field sensor.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 75.85.+t

    Magnetoelectric effects, multiferroics

  • 77.55.Nv

    Multiferroic/magnetoelectric films

  • 07.07.Df

    Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

  • 85.75.Ss

    Magnetic field sensors using spin polarized transport

  • 75.30.Gw

    Magnetic anisotropy

  • 75.60.Nt

    Magnetic annealing and temperature-hysteresis effects

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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