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Applied Physics Letters / Volume 96 / Issue 18 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 96, 182901 (2010); http://dx.doi.org/10.1063/1.3400213 (3 pages)

Dielectric properties of Er−doped HfO2 (Er ∼ 15%) grown by atomic layer deposition for high-κ gate stacks

C. Wiemer1, L. Lamagna1, S. Baldovino2, M. Perego1, S. Schamm-Chardon3, P. E. Coulon3, O. Salicio1, G. Congedo1, S. Spiga1, and M. Fanciulli1,2

1Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20041 Agrate Brianza, Monza Brianza 20041, Italy
2Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Milano, Italy
3CEMES-CNRS and Université de Toulouse, nMat group, BP 94347, 31055 Toulouse Cedex 4, France

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(Received 20 November 2009; accepted 30 March 2010; published online 5 May 2010)

Er−doped HfO2 (Er ∼ 15%) films are grown by atomic layer deposition on Si(100). The characteristics of the doped oxide are compared with those of HfO2. In Er−doped HfO2, the stabilization of the cubic structure, together with the effect of the high polarizability of Er3+, allow to obtain a dielectric constant of ∼ 33 after annealing at 900 °C. The insertion of Er within the metallic sublattice of HfO2 reduces the net density of fixed charges, due to the creation of oxygen vacancies. For similar equivalent oxide thickness, lower leakage currents are measured for Er−doped HfO2 than for HfO2.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, atomic layer deposition, dielectric polarisation, erbium, hafnium compounds, high-k dielectric thin films, leakage currents, permittivity, vacancies (crystal)

PACS

  • 77.55.D-

    High-permittivity gate dielectric films

  • 77.22.Ej

    Polarization and depolarization

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 68.55.aj

    Insulators

  • 61.72.jd

    Vacancies

  • 77.22.Ch

    Permittivity (dielectric function)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3400213

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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