APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 18 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 96, 182903 (2010); http://dx.doi.org/10.1063/1.3402761 (3 pages)

Impact of perovskite layer stacking on dielectric responses in KCa2Nan−3NbnO3n+1 (n = 3–6) Dion–Jacobson homologous series

Bao-Wen Li1,2, Minoru Osada1,3, Yasuo Ebina1,3, Tadashi C. Ozawa1,3, Renzhi Ma1,3, and Takayoshi Sasaki1,2,3

1International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
2Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
3CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan

View MapView Map

(Received 30 November 2009; accepted 29 March 2010; published online 6 May 2010)

The dielectric properties of KCa2Nan−3NbnO3n+1 (n = 3–6) Dion–Jacobson homologous series have been investigated. The dielectric constants (ε) increase with the number of octahedral units (n), and the n = 6 compound (KCa2Na3Nb6O19) exhibits a stable dielectric response with ε = ∼ 500 between 1 kHz and 1 MHz. This n-dependent behavior is similar to those observed in other layered perovskites such as Ruddlesden–Popper and Aurivillius phases. Raman scattering studies reveal that increase in n in KCa2Nan−3NbnO3n+1 leads to higher polarizability of the lattice and softening of the lowest-frequency phonon mode, which is responsible for the observed enhancement in ε with n.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

calcium compounds, ceramics, crystal structure, permittivity, phonons, polarisability, potassium compounds, Raman spectra, sodium compounds, softening

PACS

  • 77.22.Ch

    Permittivity (dielectric function)

  • 78.30.Am

    Elemental semiconductors and insulators

  • 61.66.Fn

    Inorganic compounds

  • 81.20.-n

    Methods of materials synthesis and materials processing

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3402761

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    K. Takahashi, M. Suzuki, T. Kojima, T. Watanabe, Y. Sakashita, K. Kato, O. Sakata, K. Sumitani, and H. Funakubo, Appl. Phys. Lett. 89, 082901 (2006)APPLAB000089000008082901000001.

    N. D. Orloff, W. Tian, C. J. Fennie, C. H. Lee, D. Gu, J. Mateu, X. X. Xi, K. M. Rabe, D. G. Schlom, I. Takeuchi, and J. C. Booth, Appl. Phys. Lett. 94, 042908 (2009)APPLAB000094000004042908000001.

    Y. Shimakawa, Y. Kubo, Y. Nakagawa, S. Goto, T. Kamiyama, H. Asano, and F. Izumi, Phys. Rev. B 61, 6559 (2000).

    Y. Shimakawa, H. Imai, H. Kimura, S. Kimura, Y. Kubo, E. Nishibori, M. Takata, M. Sakata, K. Kato, and Z. Hiroi, Phys. Rev. B 66, 144110 (2002).

    Y. Noguchi and M. Miyayama, Appl. Phys. Lett. 78, 1903 (2001)APPLAB000078000013001903000001.

    S. K. Rout, E. Sinha, A. Hussian, J. S. Lee, C. W. Ahn, I. W. Kim, and S. I. Woo, J. Appl. Phys. 105, 024105 (2009)JAPIAU000105000002024105000001.

    R. H. Lyddane, R. G. Sachs, and E. Teller, Phys. Rev. 59, 673 (1941).


For access to citing articles, you need to log in.


Figures (5)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Impact of perovskite layer stacking on dielectric responses in KCa2Nan−3NbnO3n+1 (n = 3–6) Dion–Jacobson homologous series
  2. Optical properties of integrated multiferroic BiFeO3 thin films for microwave applications
  3. Dielectric properties of Er−doped HfO2 (Er ∼ 15%) grown by atomic layer deposition for high-κ gate stacks
  4. The effect of transverse field on fast domain wall dynamics in magnetic microwires
  5. In-plane thermal and thermoelectric properties of misfit-layered [(PbSe)0.99]x(WSe2)x superlattice thin films
Go to AIP Home
Copyright © American Institute of Physics
close