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Appl. Phys. Lett. 96, 182904 (2010); http://dx.doi.org/10.1063/1.3425671 (3 pages)

Conduction behavior change in amorphous LaLuO3 dielectrics based on correlated barrier hopping theory

Kui Li1,2, Yidong Xia1,2, Bo Xu1,2, Xu Gao2,3, Hongxuan Guo4, Zhiguo Liu1,2, and Jiang Yin2,3

1Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China
2National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
3Department of Physics, Nanjing University, Nanjing 210093, China
4Advanced Nano Characterization Center, National Institute for Materials Science, Tsukuba 305-0047, Japan

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(Received 1 February 2010; accepted 14 April 2010; published online 7 May 2010)

Unipolar switching behaviors have been revealed in amorphous LaLuO3, which makes it suited for not only logic but memory applications using the conventional semiconductor or the emerging nano/CMOS architectures. Such switching is comprehended with regard to the conduction behavior transition between high- and low-resistance states. The conduction in high-resistance state follows the Poole’s law, whereas the conduction in low-resistance state is dominated by percolation. The transition between these resistance states is attributed to the change in the separation between oxygen vacancy sites in the light of the correlated barrier hopping theory.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 72.60.+g

    Mixed conductivity and conductivity transitions

  • 72.20.Ee

    Mobility edges; hopping transport

  • 71.30.+h

    Metal-insulator transitions and other electronic transitions

  • 61.72.jd

    Vacancies

  • 77.55.-g

    Dielectric thin films

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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