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Applied Physics Letters / Volume 96 / Issue 18 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 183101 (2010); http://dx.doi.org/10.1063/1.3409691 (3 pages)

Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots

Keun-Yong Ban1, Stephen P. Bremner2, Guangming Liu3, Som N. Dahal1, Patricia C. Dippo4, Andrew G. Norman4, and Christiana B. Honsberg1

1Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706, USA
2Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, USA
3Department of Material Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
4National Renewable Energy Laboratory, Golden, Colorado 80401, USA

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(Received 28 January 2010; accepted 3 April 2010; published online 3 May 2010)

InAs quantum dots grown on GaAsSb buffer layers with varying Sb content have been studied. Atomic force microscopy results show that the dot size is reduced as the Sb content increases with a concomitant increase in number density. Analysis of the size distribution indicates that the spread of dot sizes narrows with increasing Sb content. This is confirmed by photoluminescence measurements showing a significant narrowing of the dot emission peak for a GaAs0.77Sb0.23 buffer compared to a GaAs buffer. The results are attributed to the strained buffer reducing interactions between dots and the Sb acting as a surfactant.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

atomic force microscopy, buffer layers, III-V semiconductors, indium compounds, photoluminescence, semiconductor growth, semiconductor quantum dots

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3409691

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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