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Applied Physics Letters / Volume 96 / Issue 18 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 183104 (2010); http://dx.doi.org/10.1063/1.3425892 (3 pages)

Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

Madhu Thalakulam, C. B. Simmons, B. M. Rosemeyer, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, and M. A. Eriksson

University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

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(Received 3 March 2010; accepted 15 April 2010; published online 4 May 2010)

We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large electron effective mass in Si. Using charge sensing, we identify signatures of tunnel rates in and out of the dot that are fast or slow compared to the measurement rate. Such signatures provide a means to calibrate the absolute electron number and verify single electron occupation. Pulsed gate voltage measurements are used to validate the approach.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

effective mass, elemental semiconductors, Ge-Si alloys, semiconductor heterojunctions, semiconductor quantum dots, silicon, tunnelling

PACS

  • 73.40.Lq

    Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 73.23.Hk

    Coulomb blockade; single-electron tunneling

  • 73.40.Gk

    Tunneling

  • 73.63.Kv

    Quantum dots

  • 71.18.+y

    Fermi surface: calculations and measurements; effective mass, g factor

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3425892

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    D. Loss and D. P. Divincenzo, Phys. Rev. A 57, 120 (1998).

    C. Tahan, M. Friesen, and R. Joynt, Phys. Rev. B 66, 035314 (2002).

    A. M. Tyryshkin, S. A. Lyon, A. V. Astashkin, and A. M. Raitsimring, Phys. Rev. B 68, 193207 (2003).

    R. de Sousa and S. Das Sarma, Phys. Rev. B 68, 115322 (2003).

    R. Vrijen, E. Yablonovitch, K. Wang, H. W. Jiang, A. Balandin, V. Roychowdhury, T. Mor, and D. Divincenzo, Phys. Rev. A 62, 012306 (2000).

    M. Friesen, P. Rugheimer, D. E. Savage, M. G. Lagally, D. W. van der Weide, R. Joynt, and M. A. Eriksson, Phys. Rev. B 67, 121301 (2003).

    L. C. L. Hollenberg, A. D. Greentree, A. G. Fowler, and C. J. Wellard, Phys. Rev. B 74, 045311 (2006).

    A. Morello, C. C. Escott, H. Huebl, L. H. W. van Beveren, L. C. L. Hollenberg, D. N. Jamieson, A. S. Dzurak, and R. G. Clark, Phys. Rev. B 80, 081307 (2009).

    T. Berer, D. Pachinger, G. Pillwein, M. Mühlberger, H. Lichtenberger, G. Brunthaler, and F. Schäffler, Appl. Phys. Lett. 88, 162112 (2006)APPLAB000088000016162112000001.

    N. M. Zimmerman, B. J. Simonds, A. Fujiwara, Y. Ono, Y. Takahashi, and H. Inokawa, Appl. Phys. Lett. 90, 033507 (2007)APPLAB000090000003033507000001.

    H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama, Phys. Rev. B 77, 073310 (2008).

    E. P. Nordberg, G. A. T. Eyck, H. L. Stalford, R. P. Muller, R. W. Young, K. Eng, L. A. Tracy, K. D. Childs, J. R. Wendt, R. K. Grubbs, J. Stevens, M. P. Lilly, M. A. Eriksson, and M. S. Carroll, Phys. Rev. B 80, 115331 (2009).

    M. Xiao, M. G. House, and H. W. Jiang, Phys Rev. Lett. 104, 096801 (2010).

    C. B. Simmons, M. Thalakulam, N. Shaji, L. J. Klein, H. Qin, R. H. Blick, D. E. Savage, M. G. Lagally, S. N. Coppersmith, and M. A. Eriksson, Appl. Phys. Lett. 91, 213103 (2007)APPLAB000091000021213103000001.

    W. H. Lim, F. A. Zwanenburg, H. Huebl, M. Möttönen, K. W. Chan, A. Morello, and A. S. Dzurak, Appl. Phys. Lett. 95, 242102 (2009)APPLAB000095000024242102000001.

    M. Ciorga, A. S. Sachrajda, P. Hawrylak, C. Gould, P. Zawadzki, S. Jullian, Y. Feng, and Z. Wasilewski, Phys. Rev. B 61, R16315 (2000).

    J. Elzerman, R. Hanson, L. van Beveren, L. Vandersypen, and L. Kouwenhoven, Appl. Phys. Lett. 84, 4617 (2004)APPLAB000084000023004617000001.


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