APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 18 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 183105 (2010); http://dx.doi.org/10.1063/1.3427386 (3 pages)

Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films

B. Rezgui1, A. Sibai1, T. Nychyporuk1, M. Lemiti1, G. Bremond1, D. Maestre2, and O. Palais2

1Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
2IM2NP, CNRS UMR 6242, Université Aix-Marseille, Avenue Escadrille Normandie Niemen, Case 142, 13397, Marseille Cedex 20, France

View MapView Map

(Received 30 January 2010; accepted 15 April 2010; published online 5 May 2010)

The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiNx) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy and results in a shift in the light emission peak of the quantum dots. We show that the luminescence in our structures is attributed to the quantum confinement effect. These findings give a strong indication that the quality (density and size distribution) of Si QDs can be improved by optimizing the deposition parameters which opens a route to the fabrication of an all-Si tandem solar cell.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

elemental semiconductors, photoluminescence, plasma CVD, semiconductor quantum dots, silicon, transmission electron microscopy

PACS

  • 81.05.Cy

    Elemental semiconductors

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 52.77.Dq

    Plasma-based ion implantation and deposition

  • 68.55.A-

    Nucleation and growth

  • 78.66.Db

    Elemental semiconductors and insulators

  • 78.55.Ap

    Elemental semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3427386

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    L. Ding, T. P. Chen, Y. Liu, C. Y. Ng, and S. Fung, Phys. Rev. B 72, 125419 (2005).

    P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi, Appl. Phys. Lett. 66, 851 (1995)APPLAB000066000007000851000001.

    C. -W. Jiang and M. A. Green, J. Appl. Phys. 99, 114902 (2006)JAPIAU000099000011114902000001.

    L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, Appl. Phys. Lett. 88, 183103 (2006)APPLAB000088000018183103000001.

    S. Miura, T. Nakamura, M. Fujii, M. Inui, and S. Hayashi, Phys. Rev. B 73, 245333 (2006).

    T. -Y. Kim, N. -M. Park, K. -H. Kim, G. Y. Sung, Y. -W. Ok, T. -Y. Seong, and C. -J. Choi, Appl. Phys. Lett. 85, 5355 (2004)APPLAB000085000022005355000001.

    T. -W. Kim, C. -H. Cho, B. -H. Kim, and S. -J. Park, Appl. Phys. Lett. 88, 123102 (2006)APPLAB000088000012123102000001.

    N. -M. Park, C. -J. Choi, T. -Y. Seong, and S. -J. Park, Phys. Rev. Lett. 86, 1355 (2001).


For access to citing articles, you need to log in.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films
  2. Fast tunnel rates in Si/SiGe one-electron single and double quantum dots
Go to AIP Home
Copyright © American Institute of Physics
close