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Applied Physics Letters / Volume 96 / Issue 18 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 183106 (2010); http://dx.doi.org/10.1063/1.3425897 (3 pages)

Terahertz electroluminescence of surface plasmons from nanostructured InN layers

T. V. Shubina1, A. V. Andrianov1, A. O. Zakhar’in1, V. N. Jmerik1, I. P. Soshnikov1, T. A. Komissarova1, A. A. Usikova1, P. S. Kop’ev1, S. V. Ivanov1, V. A. Shalygin2, A. N. Sofronov2, D. A. Firsov2, L. E. Vorob’ev2, N. A. Gippius3, J. Leymarie3, X. Wang4, and Akihiko Yoshikawa5

1Ioffe Physico-Technical Institute, RAS, St. Petersburg, Leningrad 194021, Russia
2St. Petersburg State Polytechnical University, St. Petersburg 195251, Russia
3LASMEA-UMR 6602 CNRS-UBP, 63177 Aubiere Cedex, France
4Peking University, Beijing 100871, People’s Republic of China
5Chiba University, 1-33 Yayoicho, Inage-ku, Chiba 263-8522, Japan

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(Received 22 March 2010; accepted 15 April 2010; published online 5 May 2010)

The terahertz (THz) emission with the maximum at the 3–5 THz is observed under electrical pumping from InN epilayers, where structural imperfections such as nanocolumns, pores, and In clusters are situated with a certain periodicity. This radiation is ascribed to the spontaneous emission of surface plasmon polariton like waves guided in thin surface/interior layers and coupled to electromagnetic field at these imperfections. These waves are generated thermally under applied electric field. The registered THz spectra and power dependences are well consistent with this plasmon-related radiation mechanism.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electroluminescence, electromagnetic fields, III-V semiconductors, indium compounds, nanostructured materials, polaritons, semiconductor epitaxial layers, surface plasmons, terahertz wave spectra, wide band gap semiconductors

PACS

  • 78.67.-n

    Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

  • 78.60.Fi

    Electroluminescence

  • 78.70.Gq

    Microwave and radio-frequency interactions

  • 73.22.Lp

    Collective excitations

  • 71.36.+c

    Polaritons (including photon-phonon and photon-magnon interactions)

  • 78.66.Fd

    III-V semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3425897

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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