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Applied Physics Letters / Volume 96 / Issue 18 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 183112 (2010); http://dx.doi.org/10.1063/1.3428393 (3 pages)

Synthesis and optical properties of GaN/ZnO solid solution nanocrystals

Wei-Qiang Han1, Zhenxian Liu2, and Hua-Gen Yu3

1Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA
2Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015, USA
3Department of Chemistry, Brookhaven National Laboratory, Upton, New York 11973, USA

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(Received 24 March 2010; accepted 15 April 2010; published online 6 May 2010)

We devised a synthesis route to prepare narrow band gap GaN/ZnO solid solution nanocrystals via nitriding a homogeneous Ga-Zn-O nanoprecursor. The nanocrystals were characterized by several following methods: x-ray diffractometer, transmission electron microscopy, ultraviolet-visible diffuse reflection, and Raman spectroscopy. Here, we can control the composition of nanocrystals by the nitridation temperature. From 550 to 850 °C, the corresponding crystalline size varies from 6.1 to 27 nm. It has been demonstrated that the sample prepared at 650 °C had the narrowest band gap of 2.21 eV. Microstructural investigations show that the (101) surface is the predominantly exposed one for the GaN/ZnO solid solution nanocrystals. We also discuss the influence of chemical disorder based on the Raman spectra acquired.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, II-VI semiconductors, nanostructured materials, nitridation, Raman spectra, solid solutions, surface hardening, transmission electron microscopy, ultraviolet spectra, visible spectra, wide band gap semiconductors, X-ray diffraction, zinc compounds

PACS

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 81.07.Bc

    Nanocrystalline materials

  • 78.67.Bf

    Nanocrystals, nanoparticles, and nanoclusters

  • 78.40.Fy

    Semiconductors

  • 78.30.Fs

    III-V and II-VI semiconductors

  • 81.65.Lp

    Surface hardening: nitridation, carburization, carbonitridation

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3428393

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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