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Applied Physics Letters / Volume 96 / Issue 18 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 96, 183301 (2010); http://dx.doi.org/10.1063/1.3415497 (3 pages)

Organic Schottky barrier photovoltaic cells based on MoOx/C60

Minlu Zhang1, Irfan2, Huanjun Ding2, Yongli Gao2, and C. W. Tang1,2

1Department of Chemical Engineering, University of Rochester, Rochester, New York 14627, USA
2Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA

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(Received 23 December 2009; accepted 3 April 2010; published online 4 May 2010)

We report that the performance of indium tin oxide/molybdenum oxide/fullerene (ITO/MoOx/C60) photovoltaic cells is highly sensitive to the method of depositing MoOx film. The highest open-circuit voltage and short-circuit current are obtained using thermally evaporated MoOx. In contrast, sputtered MoOx produces lower efficiencies. X-ray and ultraviolet photoemission analyses indicate that pristine thermally evaporated MoOx has a high work function of 6.8 eV and Mo6+ oxidation state, whereas argon-sputtered MoOx is characterized by lower work function and coexistence of both Mo6+ and Mo5+ states. The photovoltaic performance of the ITO/MoOx/C60 cells is consistent with MoOx functioning as the Schottky barrier contact.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

fullerenes, indium compounds, molybdenum compounds, photoemission, photovoltaic cells, Schottky barriers, tin compounds, ultraviolet spectra, vacuum deposition, work function, X-ray analysis

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3415497

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (4) Tables (1)

Figures (click on thumbnails to view enlargements)

FIG.1
Current-voltage characteristics obtained with AM 1.5G and 100 mW/cm2 illumination for ITO/MoOx/C60 OPV cells with a 3 nm MoOx layer deposited by various methods and with or without exposure to atmosphere: thermal deposition and without exposure (−⋅−⋅); thermal deposition and with exposure (—); Ar-sputtering and with exposure (⋯ ⋅); and Ar/O2-sputtering and with exposure (- - -).

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
Schematic energy level diagram of the ITO/MoOx/C60 interfaces under equilibrium condition.

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FIG.3
UPS spectra of MoOx on ITO/glass: MoOx film deposited by thermal evaporation (—); by sputtering deposition in Ar (⋯ ⋅); and by sputtering deposition in Ar/O2 (- - -). These films were exposed to the atmospheric ambient prior to UPS measurements. Also shown is the UPS spectrum of a thermally evaporated MoOx film without exposure (−⋅−⋅).

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
XPS spectra of the Mo 3d core levels for MoOx films deposited by thermal evaporation, sputtering in Ar, and in Ar/O2. The thicker line is the fitting of the experimental data (squares) using Mo5+ and Mo6+ Gaussian components (thin lines).

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

Tables

Table I. Photovoltaic parameters for ITO/MoOx/C60 cells with different thickness of MoOx deposited by thermal evaporation and sputtering methods.

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