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Applied Physics Letters / Volume 96 / Issue 18 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 96, 183303 (2010); http://dx.doi.org/10.1063/1.3424792 (3 pages)

Efficient charge injection from a high work function metal in high mobility n-type polymer field-effect transistors

M. Caironi1,2, C. Newman3, J. R. Moore1, D. Natali2,4, H. Yan3, A. Facchetti3, and H. Sirringhaus1

1Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
2Center for Nano Science and Technology, IIT@PoliMi, Via Pascoli 70/3, 20133 Milano, Italy
3Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA
4Politecnico di Milano, D.E.I., Piazza L. da Vinci 32, 20133 Milano, Italy

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(Received 8 January 2010; accepted 13 April 2010; published online 5 May 2010)

We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)}. Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm2/V s when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 kΩ cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

charge injection, contact resistance, electron mobility, high electron mobility transistors, organic field effect transistors, polymers, work function

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3424792

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
(a) Transfer and (b) output curves for a P(NDI2OD-T2) FET with L = 21.5 μm and W = 1 mm. (c) Linear μe vs L. (d) Schematic cross-section of a FET.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(a) RC×W at VD = 5 V as a function of VG as obtained with various methods. (b) RC×W extracted with gFPP at VD = 1, 3, and 5 V for a device with L = 30 μm. (c) RS×W and RD×W for a device with L = 40 μm measured at VD = 5 V with gFPP, with a first source/drain contacts configuration (black circles) and with swapped contacts (white circles).

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(a) Current density at the source and at the drain contacts vs the corresponding voltage drop at VG = 60 V. (b) J vs the average applied field in a Al/P(NDI2OD-T2)/Al diode (squares) and best fitting to Mott–Gurney law by assuming a dielectric constant of 3 (dashed line).

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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