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Applied Physics Letters / Volume 96 / Issue 18 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 96, 183304 (2010); http://dx.doi.org/10.1063/1.3419899 (3 pages)

Electron transport in rubrene single-crystal transistors

Satria Zulkarnaen Bisri1, Taishi Takenobu1,2, Tetsuo Takahashi1, and Yoshihiro Iwasa1,3

1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
2Precursory Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency, 3-5 Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan
3Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 330-0012, Japan

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(Received 5 January 2010; accepted 3 April 2010; published online 6 May 2010)

We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm2/V s is achieved by performing multiple purifications of single crystals and device aging inside an N2-filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

ageing, crystal purification, electron mobility, hole mobility, impurity states, organic field effect transistors, organic semiconductors

PACS

  • 72.20.Fr

    Low-field transport and mobility; piezoresistance

  • 85.30.Tv

    Field effect devices

  • 61.72.S-

    Impurities in crystals

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3419899

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

  1. M. Yamagishi, J. Takeya, Y. Tominari, Y. Nakazawa, T. Kuroda, S. Ikehata, M. Uno, T. Nishikawa, and T. Kawase, Appl. Phys. Lett. 90, 182117 (2007)APPLAB000090000018182117000001. [ISI]
  2. R. W. I. de Boer, M. E. Gershenson, A. F. Morpurgo, and V. Podzorov, Phys. Status Solidi A 201, 1302 (2004).
  3. V. Podzorov, V. M. Pudalov, and M. E. Gershenson, Appl. Phys. Lett. 82, 1739 (2003)APPLAB000082000011001739000001.
  4. V. Podzorov, S. Sysoev, E. Loginova, V. Pudalov, and M. Gershenson, Appl. Phys. Lett. 83, 3504 (2003)APPLAB000083000017003504000001.
  5. J. Takeya, M. Yamagishi, Y. Tominari, R. Hirahara, Y. Nakazawa, T. Nishikawa, T. Kawase, T. Shimoda, and S. Ogawa, Appl. Phys. Lett. 90, 102120 (2007)APPLAB000090000010102120000001. [ISI]
  6. J. Takeya, J. Kato, K. Hara, M. Yamagishi, R. Hirahara, K. Yamada, Y. Nakazawa, S. Ikehata, K. Tsukagoshi, Y. Aoyagi, T. Takenobu, and Y. Iwasa, Phys. Rev. Lett. 98, 196804 (2007). [ISI] [MEDLINE]
  7. T. Takahashi, T. Takenobu, J. Takeya, and Y. Iwasa, Appl. Phys. Lett. 88, 033505 (2006)APPLAB000088000003033505000001.
  8. D. A. da Silva Filho, E. G. Kim, and J. L. Bredas, Adv. Mater. (Weinheim, Ger.) 17, 1072 (2005).
  9. T. Takenobu, T. Takahashi, J. Takeya, and Y. Iwasa, Appl. Phys. Lett. 90, 013507 (2007)APPLAB000090000001013507000001. [ISI]
  10. J. Zaumseil and H. Sirringhaus, Chem. Rev. (Washington, D.C.) 107, 1296 (2007). [MEDLINE]
  11. T. Takahashi, T. Takenobu, J. Takeya, and Y. Iwasa, Adv. Funct. Mater. 17, 1623 (2007).
  12. M. Muccini, Nature Mater. 5, 605 (2006). [MEDLINE]
  13. S. Z. Bisri, T. Takenobu, Y. Yomogida, H. Shimotani, T. Yamao, S. Hotta, and Y. Iwasa, Adv. Funct. Mater. 19, 1728 (2009).
  14. S. Z. Bisri, T. Takahashi, T. Takenobu, M. Yahiro, C. Adachi, and Y. Iwasa, Jpn. J. Appl. Phys., Part 2 46, L596 (2007).
  15. R. A. Laudise, Ch. Kloc, P. G. Simpkins, and T. Siegrist, J. Cryst. Growth 187, 449 (1998).
  16. See supplementary material at http://dx.doi.org/10.1063/1.3419899 for S1: multiple purification process of the single crystals. S2: the optical characterization of electron traps removal. S3: aging time dependence of electron transport in the five-times purified single crystal device. [EPAPS]
  17. T. Takenobu, S. Z. Bisri, T. Takahashi, M. Yahiro, C. Adachi, and Y. Iwasa, Phys. Rev. Lett. 100, 066601 (2008). [MEDLINE]
  18. V. C. Sundar, J. Zaumseil, V. Podzorov, E. Menard, R. L. Willett, T. Someya, M. E. Gershenson, and J. A. Rogers, Science 303, 1644 (2004). [MEDLINE]
  19. C. Reese and Z. Bao, Adv. Mater. (Weinheim, Ger.) 19, 4535 (2007).
  20. D. Käfer and G. Witte, Phys. Chem. Chem. Phys. 7, 2850 (2005). [ISI] [MEDLINE]
  21. A. J. Maliakal, J. Y. C. Chen, W. -Y. So, S. Jockusch, B. Kim, M. F. Ottaviani, A. Modelli, N. J. Turro, C. Nuckolls, and A. P. Ramirez, Chem. Mater. 21, 5519 (2009).
  22. T. Kaji, T. Takenobu, A. F. Morpurgo, and Y. Iwasa, Adv. Mater. (Weinheim, Ger.) 21, 3689 (2009).
  23. O. Mitrofanov, D. V. Lang, C. Kloc, J. M. Wikberg, T. Siegrist, W. Y. So, M. A. Sergent, and A. P. Ramirez, Phys. Rev. Lett. 97, 166601 (2006). [MEDLINE]
  24. O. Mitrofanov, C. Kloc, T. Siegrist, D. V. Lang, W. Y. So, and A. P. Ramirez, Appl. Phys. Lett. 91, 212106 (2007)APPLAB000091000021212106000001.
  25. I. Hulea, S. Fratini, H. Xie, C. Mulder, N. Iossad, G. Rastelli, S. Ciuchi, and A. Morpurgo, Nature Mater. 5, 982 (2006). [MEDLINE]
  26. E. Menard, V. Podzorov, S. H. Hur, A. Gaur, M. E. Gershenson, and J. A. Rogers, Adv. Mater. (Weinheim, Ger.) 16, 2097 (2004).

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Figures (click on thumbnails to view enlargements)

FIG.1
(a) Optical microscopy image and schematic diagram of typical devices used. (b) ID-VD output characteristics of a rubrene ambipolar device with fast-evaporated thick Ca electrode on a first purified single crystal. (c) Low bias output characteristics of the same device.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(a) Multiple purification dependence of ID1/2-VG transfer characteristics. The current axes have been scaled by the capacitance of each device to facilitate comparison. Lines with open dots, diamonds, and squares indicate the characteristics of once purified (as-grown), three times purified, and five times purified crystals, respectively. (b) Purification cycle dependent electron mobility (red dots) and accumulation threshold voltage (blue diamonds) of rubrene single-crystal transistors. The symbols represent the average value of 6 devices with the error bars show the minimum and the maximum values.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(a) Aging time dependence of ID1/2-VG transfer characteristics. The line with open dots indicates the characteristics of the as-fabricated device, and those with open squares and open diamonds indicate the characteristics of the identical device after aging for 70 h and 16 days, respectively. (b) Aging time dependence of electron mobility and threshold voltage.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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