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Appl. Phys. Lett. 96, 183503 (2010); http://dx.doi.org/10.1063/1.3427363 (3 pages)

Dielectric charging characterization on microelectromechanical switches by discharge current transient

David Molinero1,2 and Luis Castaner2

1Lehigh University, 5 East Packer Avenue, Bethlehem, Pennsylvania 18015, USA
2Universitat Politecnica de Catalunya, Jordi Girona 1-3, Modul C4, 08034 Barcelona, Spain

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(Received 16 December 2009; accepted 16 April 2010; published online 6 May 2010)

The discharge current method is used to quantify the dielectric reliability of microelectromechanical switches. Two dielectrics, silicon oxide and silicon nitride, were used to extract the charge trapped, the emissivity and the dielectric relaxation time by means of a circuital model with a current source simulating the charge trap. A figure of merit is proposed to better quantify the dielectric reliability issues.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 85.85.+j

    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

  • 84.32.Dd

    Connectors, relays, and switches

  • 85.50.-n

    Dielectric, ferroelectric, and piezoelectric devices

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    D. Molinero and L. Castañer, Appl. Phys. Lett. 92, 043502 (2008)APPLAB000092000004043502000001.

    D. Molinero and L. Castaner, Appl. Phys. Lett. 94, 043503 (2009)APPLAB000094000004043503000001.

    P. C. Arnett, J. Appl. Phys. 46, 5236 (1975)JAPIAU000046000012005236000001.

    D. J. Dimaria, F. J. Feigl, and S. R. Butler, Phys. Rev. B 11, 5023 (1975).


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