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Applied Physics Letters / Volume 96 / Issue 18 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 183504 (2010); http://dx.doi.org/10.1063/1.3428433 (3 pages)

Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3–SrTiO3 interfaces

R. Jany1, M. Breitschaft1, G. Hammerl1, A. Horsche1, C. Richter1, S. Paetel1, J. Mannhart1, N. Stucki2, N. Reyren2, S. Gariglio2, P. Zubko2, A. D. Caviglia2, and J.-M. Triscone2

1Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, 86135 Augsburg, Germany
2DPMC, University of Geneva, 24 Quai E.-Ansermet, 1211 Geneva 4, Switzerland

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(Received 8 February 2010; accepted 16 April 2010; published online 7 May 2010)

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO3–SrTiO3 interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

avalanche diodes, electric breakdown, lanthanum compounds, metal-insulator transition, strontium compounds

PACS

  • 85.30.Kk

    Junction diodes

  • 71.30.+h

    Metal-insulator transitions and other electronic transitions

  • 77.22.Jp

    Dielectric breakdown and space-charge effects

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3428433

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. Breitschaft, V. Tinkl, N. Pavlenko, S. Thiel, C. Richter, J. R. Kirtley, Y. C. Liao, G. Hammerl, V. Eyert, T. Kopp, and J. Mannhart, Phys. Rev. B 81, 153414 (2010).

    G. Koster, B. L. Kropman, G. J. H. M. Rijnders, D. H. A. Blank, and H. Rogalla, Appl. Phys. Lett. 73, 2920 (1998)APPLAB000073000020002920000001.

    C. W. Schneider, S. Thiel, G. Hammerl, C. Richter, and J. Mannhart, Appl. Phys. Lett. 89, 122101 (2006)APPLAB000089000012122101000001.

    T. Kopp and J. Mannhart, J. Appl. Phys. 106, 064504 (2009)JAPIAU000106000006064503000001.


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