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Applied Physics Letters / Volume 96 / Issue 18 / INTERDISCIPLINARY AND GENERAL PHYSICS

Appl. Phys. Lett. 96, 184101 (2010); http://dx.doi.org/10.1063/1.3425739 (3 pages)

Nondestructive depth-resolved spectroscopic investigation of the heavily intermixed In2S3/Cu(In,Ga)Se2 interface

M. Bär1,2, N. Barreau3, F. Couzinié-Devy3, S. Pookpanratana2, J. Klaer1, M. Blum2,4, Y. Zhang2, W. Yang5, J. D. Denlinger5, H.-W. Schock1, L. Weinhardt4, J. Kessler3, and C. Heske2

1Solar Energy Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
2Department of Chemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154-4003, USA
3Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France
4Experimentelle Physik VII, Universität Würzburg, 97074 Würzburg, Germany
5Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

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(Received 6 April 2010; accepted 15 April 2010; published online 3 May 2010)

The chemical structure of the interface between a nominal In2S3 buffer and a Cu(In,Ga)Se2 (CIGSe) thin-film solar cell absorber was investigated by soft x-ray photoelectron and emission spectroscopy. We find a heavily intermixed, complex interface structure, in which Cu diffuses into (and Na through) the buffer layer, while the CIGSe absorber surface/interface region is partially sulfurized. Based on our spectroscopic analysis, a comprehensive picture of the chemical interface structure is proposed.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

chemical structure, copper compounds, diffusion, indium compounds, interface structure, nondestructive testing, solar cells, ternary semiconductors, thin film devices, X-ray emission spectra, X-ray photoelectron spectra

PACS

  • 88.40.jn

    Thin film Cu-based I-III-VI2 solar cells

  • 81.70.-q

    Methods of materials testing and analysis

  • 68.35.Ct

    Interface structure and roughness

  • 66.30.-h

    Diffusion in solids

  • 79.60.Jv

    Interfaces; heterostructures; nanostructures

  • 78.70.En

    X-ray emission spectra and fluorescence

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3425739

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    D. Abou-Ras, G. Kostorz, A. Strom, H. -W. Schock, and A. N. Tiwari, J. Appl. Phys. 98, 123512 (2005)JAPIAU000098000012123512000001
    and references therein.

    M. Bär, N. Allsop, I. Lauermann, and Ch. -H. Fischer, Appl. Phys. Lett. 90, 132118 (2007)APPLAB000090000013132118000001.

    C. Heske, R. Fink, E. Umbach, W. Riedl, and F. Karg, Appl. Phys. Lett. 68, 3431 (1996)APPLAB000068000024003431000001.

    For a detailed discussion of the S L2,3 spectrum see, e.g., J. Reichardt, M. Bär, A. Grimm, I. Kötschau, I. Lauermann, S. Sokoll, M. C. Lux-Steiner, Ch. -H. Fischer, C. Heske, L. Weinhardt, O. Fuchs, Ch. Jung, W. Gudat, T. P. Niesen, and F. Karg, Appl. Phys. Lett. 86, 172102 (2005)APPLAB000086000017172102000001.


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