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Applied Physics Letters / Volume 96 / Issue 18 / INTERDISCIPLINARY AND GENERAL PHYSICS

Appl. Phys. Lett. 96, 184102 (2010); http://dx.doi.org/10.1063/1.3419837 (3 pages)

Hollow tin/chromium whiskers

Jing Cheng1, Paul T. Vianco2, and James C.M. Li1

1Materials Science Program, University of Rochester, Rochester, New York 14627, USA
2Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

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(Received 28 October 2009; accepted 9 January 2010; published online 4 May 2010)

Tin whiskers have been an engineering challenge for over five decades. The mechanism has not been agreed upon thus far. This experiment aimed to identify a mechanism by applying compressive stresses to a tin film evaporated on silicon substrate with an adhesion layer of chromium in between. A phenomenon was observed in which hollow whiskers grew inside depleted areas. Using focused ion beam, the hollow whiskers were found to contain both tin and chromium. At the bottom of the depleted areas, thin tin/tin oxide film remained over the chromium layer. It indicates that tin transport occurred along the interface between tin and chromium layers.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

adhesion, chromium, grain boundary diffusion, internal stresses, metallic thin films, multilayers, tin, vacuum deposition, whiskers (crystal)

PACS

  • 68.70.+w

    Whiskers and dendrites (growth, structure, and nonelectronic properties)

  • 68.55.A-

    Nucleation and growth

  • 61.72.Mm

    Grain and twin boundaries

  • 68.60.Bs

    Mechanical and acoustical properties

  • 81.15.-z

    Methods of deposition of films and coatings; film growth and epitaxy

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3419837

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    G. T. T. Sheng and C. F. Hu, J. Appl. Phys. 92, 64 (2002)JAPIAU000092000001000064000001.

    J. D. Eshelby, Phys. Rev. 91, 755 (1953).

    K. N. Tu, Phys. Rev. B 49, 2030 (1994).

    H. -P. Kehrer and H. G. Kadereit, Appl. Phys. Lett. 16, 411 (1970)APPLAB000016000011000411000001.


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