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3 May 2010

Volume 96, Issue 18, Articles (18xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 183102 (2010); http://dx.doi.org/10.1063/1.3419932 (3 pages)

Bernard Aufray, Abdelkader Kara, Sébastien Vizzini, Hamid Oughaddou, Christel Léandri, Benedicte Ealet, and Guy Le Lay
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Space charge limited current in a gap combined of free space and solid

W. Chandra and L. K. Ang

Appl. Phys. Lett. 96, 183501 (2010); http://dx.doi.org/10.1063/1.3425893 (3 pages) | Cited 3 times

Online Publication Date: 3 May 2010

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The paper presents a model of the space charge limited (SCL) electron conduction in a gap with a combination of free space and dielectric solid. The SCL electron current density J is solved numerically to obtain the voltage scaling of J ∼ VGn, and n is found to be between n = 3/2 (a vacuum gap) and n = 2 (a dielectric diode). The dependence of n is calculated as a function of dielectric constant, electron mobility, and the relative length scale between the free space and dielectric solid. The model has been used to explain a recent experiment.
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77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ch Permittivity (dielectric function)

Printed energy storage devices by integration of electrodes and separators into single sheets of paper

Liangbing Hu, Hui Wu, and Yi Cui

Appl. Phys. Lett. 96, 183502 (2010); http://dx.doi.org/10.1063/1.3425767 (3 pages) | Cited 19 times

Online Publication Date: 5 May 2010

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We report carbon nanotube thin film-based supercapacitors fabricated with printing methods, where electrodes and separators are integrated into single sheets of commercial paper. Carbon nanotube films are easily printed with Meyer rod coating or ink-jet printing onto a paper substrate due to the excellent ink absorption of paper. A specific capacity of 33 F/g at a high specific power of 250 000 W/kg is achieved with an organic electrolyte. Such a lightweight paper-based supercapacitor could be used to power paper electronics such as transistors or displays.
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82.47.Uv Electrochemical capacitors; supercapacitors
84.32.Tt Capacitors

Dielectric charging characterization on microelectromechanical switches by discharge current transient

David Molinero and Luis Castaner

Appl. Phys. Lett. 96, 183503 (2010); http://dx.doi.org/10.1063/1.3427363 (3 pages)

Online Publication Date: 6 May 2010

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The discharge current method is used to quantify the dielectric reliability of microelectromechanical switches. Two dielectrics, silicon oxide and silicon nitride, were used to extract the charge trapped, the emissivity and the dielectric relaxation time by means of a circuital model with a current source simulating the charge trap. A figure of merit is proposed to better quantify the dielectric reliability issues.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
84.32.Dd Connectors, relays, and switches
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3–SrTiO3 interfaces

R. Jany, M. Breitschaft, G. Hammerl, A. Horsche, C. Richter, S. Paetel, J. Mannhart, N. Stucki, N. Reyren, S. Gariglio, P. Zubko, A. D. Caviglia, and J.-M. Triscone

Appl. Phys. Lett. 96, 183504 (2010); http://dx.doi.org/10.1063/1.3428433 (3 pages) | Cited 3 times

Online Publication Date: 7 May 2010

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Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO3–SrTiO3 interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.
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85.30.Kk Junction diodes
71.30.+h Metal-insulator transitions and other electronic transitions
77.22.Jp Dielectric breakdown and space-charge effects
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