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10 May 2010

Volume 96, Issue 19, Articles (19xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 193101 (2010); http://dx.doi.org/10.1063/1.3425776 (3 pages)

J. J. Zhang, N. Hrauda, H. Groiss, A. Rastelli, J. Stangl, F. Schäffler, O. G. Schmidt, and G. Bauer
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Drawn metamaterials with plasmonic response at terahertz frequencies

A. Tuniz, B. T. Kuhlmey, R. Lwin, A. Wang, J. Anthony, R. Leonhardt, and S. C. Fleming

Appl. Phys. Lett. 96, 191101 (2010); http://dx.doi.org/10.1063/1.3428576 (3 pages) | Cited 14 times

Online Publication Date: 10 May 2010

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Electromagnetic metamaterials attract much attention since they can be engineered to exhibit optical properties not found in nature. Their fabrication, however, is challenging, especially in volume. We introduce drawing as a means of fabricating metamaterials, thus demonstrating a terahertz metamaterial. We codraw polymethyl-methacrylate and indium, producing several meters of metamaterial with wire diameters down to ∼ 10 μm, and lattice constants of ∼ 100 μm. We experimentally characterize the transmission properties of different samples, observing high-pass filtering between 0.3–0.4 THz, in good agreement with simulations.
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81.05.Xj Metamaterials for chiral, bianisotropic and other complex media
78.70.Gq Microwave and radio-frequency interactions
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
81.20.-n Methods of materials synthesis and materials processing

Dual wavelength GaSb based type I quantum well mid-infrared light emitting diodes

Seungyong Jung, Sergey Suchalkin, Gela Kipshidze, David Westerfeld, Eric Golden, Donald Snyder, and Gregory Belenky

Appl. Phys. Lett. 96, 191102 (2010); http://dx.doi.org/10.1063/1.3425899 (3 pages) | Cited 2 times

Online Publication Date: 10 May 2010

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We have designed and developed dual wavelength type I quantum well light emitting diodes (LEDs) operating at 2 μm and 3–3.4 μm wavelengths with independently controlled intensities. The room temperature quasicontinuous wave output power was 2.8 mW at 2 μm and 0.14 mW at 3 μm. The design of the dual wavelength structure allows for monolithically integrating LED pixels with different wavelengths opening the way for the fabrication of multiwavelength LED arrays for multispectral and hyperspectral imaging applications.
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85.60.Jb Light-emitting devices
85.60.Gz Photodetectors (including infrared and CCD detectors)

Linear polarization rotators based on dye-doped liquid crystal cells

Chia-Yi Huang, Hong-Yi Tsai, Yi-Hong Wang, Chong-Ming Huang, Kuang-Yao Lo, and Chia-Rong Lee

Appl. Phys. Lett. 96, 191103 (2010); http://dx.doi.org/10.1063/1.3428773 (3 pages) | Cited 4 times

Online Publication Date: 10 May 2010

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Linear polarization rotator is fabricated by a single-side homogenously aligned dye-doped liquid crystal cell and linear variable neutral density filter (LVNDF). When a pump beam passing through the transmittance-linear region of LVNDF irradiates on the untreated surface, the surface LC director in the irradiation region is photoaligned into a continuous twist from 0° to 90°. Consequently, the bulk director gradually transits from a homogeneous to twist orientation. This device is capable of rotating the polarization of an input linearly polarized light depending on the beam position, exhibiting a large continuous twist region (5.6 mm) and high contrast ratio ( ∼ 1000:1).
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42.70.Df Liquid crystals
42.25.Ja Polarization
42.79.Ci Filters, zone plates, and polarizers

Ultrafast laser inscription of bistable and reversible waveguides in strontium barium niobate crystals

D. Jaque, N. D. Psaila, R. R. Thomson, F. Chen, L. M. Maestro, A. Ródenas, D. T. Reid, and A. K. Kar

Appl. Phys. Lett. 96, 191104 (2010); http://dx.doi.org/10.1063/1.3429584 (3 pages) | Cited 3 times

Online Publication Date: 11 May 2010

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We report the fabrication of buried optical channel waveguides in strontium barium niobate nonlinear ferroelectric crystals by direct ultrafast laser inscription. These waveguides are strongly polarized and can be reversibly switched on and off by changing the temperature of the crystal, a characteristic we attribute to the bistable enhancement of the electro-optic coefficients at the ferro to paraelectric phase transition.
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42.79.Gn Optical waveguides and couplers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Wi Nonlinear waveguides
42.70.Mp Nonlinear optical crystals
42.86.+b Optical workshop techniques
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

On ternary nitride substrates for visible semiconductor light-emitters

T. K. Sharma and E. Towe

Appl. Phys. Lett. 96, 191105 (2010); http://dx.doi.org/10.1063/1.3425885 (3 pages) | Cited 4 times

Online Publication Date: 11 May 2010

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No nitride or other substrate material exists for growing lattice-matched nitride device structures. Use of bulk GaN or sapphire substrates is complicated by lattice and thermal mismatches that lead to defect and dislocation generation. To alleviate this problem, we recently proposed ternary nitride substrates on which lattice-matched structures could be grown for lasers within specified spectral bands. These proposed application-oriented nitride substrates have one drawback: several would be required to cover the visible spectrum. By taking advantage of the complex (but feature-rich) valence band structure of nitrides, we have determined that a single substrate (In0.15Ga0.85N) could be used for the development of efficient blue, green, and red laser diodes.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Two-photon absorption photocurrent in p-i-n diode embedded silicon microdisk resonators

Hui Chen and Andrew W. Poon

Appl. Phys. Lett. 96, 191106 (2010); http://dx.doi.org/10.1063/1.3430548 (3 pages) | Cited 6 times

Online Publication Date: 13 May 2010

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We demonstrate two-photon absorption (TPA) photocurrent in p-i-n diode embedded silicon microdisk resonators. Our experiments reveal TPA photocurrent spectra with peaks corresponding to the microdisk resonance modes. The photocurrents at resonance wavelengths exceed those at off-resonance wavelengths by up to three orders of magnitude. We study the microdisk photocurrent spectra with various p-i-n diode intrinsic region widths in the microdisk rim. We report TPA photovoltaic effect with maximum power generation efficiency of ∼ 0.3%.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Evolution of locally excited avalanches in semiconductors

Z. L. Yuan, J. F. Dynes, A. W. Sharpe, and A. J. Shields

Appl. Phys. Lett. 96, 191107 (2010); http://dx.doi.org/10.1063/1.3425737 (3 pages) | Cited 5 times

Online Publication Date: 13 May 2010

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We show that semiconductor avalanche photodiodes can exhibit diminutive amplification noise during the early evolution of avalanches. The noise is so low that the number of locally excited charges that seed each avalanche can be resolved. These findings constitute an important step towards realization of a solid-state noiseless amplifier for quantum information processing. Moreover, we believe that the experimental setup used, i.e., time-resolving locally excited avalanches, will become a useful tool for optimizing the number resolution.
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85.60.Dw Photodiodes; phototransistors; photoresistors
84.30.Le Amplifiers

Three-dimensional surface current loops in terahertz responsive microarrays

Jatinder S. Randhawa, Saumya S. Gurbani, Michael D. Keung, Devin P. Demers, Megan R. Leahy-Hoppa, and David H. Gracias

Appl. Phys. Lett. 96, 191108 (2010); http://dx.doi.org/10.1063/1.3428657 (3 pages) | Cited 1 time

Online Publication Date: 13 May 2010

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We investigated the effect of the third dimension in terahertz (THz) responsive microarrays using finite element simulations and by measuring their transmission spectra in the range of 0.2 to 1.1 THz. We observed that the presence of three-dimensional (3D) surface current loops in microarrays composed of cubic units resulted in enhanced transmission as compared to two-dimensional single and stacked layers, suggesting that the incorporation of geometries that enable truly 3D current loops is an important factor in optically responsive metamaterials.
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78.70.Gq Microwave and radio-frequency interactions

High-power surface emission from terahertz distributed feedback lasers with a dual-slit unit cell

Lukas Mahler, Alessandro Tredicucci, Fabio Beltram, Christoph Walther, Jérôme Faist, Harvey E. Beere, and David A. Ritchie

Appl. Phys. Lett. 96, 191109 (2010); http://dx.doi.org/10.1063/1.3430522 (3 pages) | Cited 7 times

Online Publication Date: 14 May 2010

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We present a surface emitting distributed feedback terahertz laser resonator based on a dual-slit configuration. With the spacing of the slits as a parameter, the surface losses of the lasers can be chosen over a large range, while keeping slits narrow for optimum current injection. Quantum cascade devices based on a double metal waveguide showed slope efficiencies up to 40 mW/A and peak powers of more than 20 mW. The efficient radiation out-coupling does not depend on boundary conditions, and therefore would allow the application to large-area devices, making this an ideal resonator for high-power surface emission.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Adiabatic compression of terahertz waves using metal flares

Michael Theuer, René Beigang, and Daniel R. Grischkowsky

Appl. Phys. Lett. 96, 191110 (2010); http://dx.doi.org/10.1063/1.3430740 (3 pages) | Cited 11 times

Online Publication Date: 14 May 2010

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We report on the adiabatic free-space coupling of broadband terahertz (THz) radiation through a subwavelength gap using metal flares. Amplitude coupling ratios better than 30% are obtained by optimizing the curvature. This scheme shows a large potential for increasing the sensitivity in THz spectroscopy using high spatial confinement without the need of transmission optics or high precision components. The intrinsic curvature of metal sheets is already sufficient to carry out experiments downsizing the microwave approach.
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07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
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Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon

Lingguo Meng, Jianping Xing, Zhihu Liang, Chunliang Liu, and Zhaojun Lin

Appl. Phys. Lett. 96, 191501 (2010); http://dx.doi.org/10.1063/1.3428789 (3 pages)

Online Publication Date: 11 May 2010

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We introduce the idea of a pressure-independent point (PIP) in a group of current-voltage curves for the coplanar electrode microplasma device (CEMPD) at neon pressures ranging from 15 to 95 kPa. We studied four samples of CEMPDs with different sizes of the microcavity and observed the PIP phenomenon for each sample. The PIP voltage depends on the area of the microcavity and is independent of the height of the microcavity. The PIP discharge current, IPIP, is proportional to the volume (Vol) of the microcavity and can be expressed by the formula IPIP = IPIP0+D×Vol. For our samples, IPIP0 (the discharge current when Vol is zero) is about zero and D (discharge current density) is about 3.95 mA mm−3. The error in D is 0.411 mA mm−3 (less than 11% of D). When the CEMPD operates at VPIP, the discharge current is quite stable under different neon pressures.
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52.75.-d Plasma devices
52.80.-s Electric discharges
52.25.Fi Transport properties

Generation of ultrahigh frequency air microplasma in a magnetic loop and effects of pulse modulation on operation

Mazdak Taghioskoui, Joshua Perlow, Mona Zaghloul, and Akbar Montaser

Appl. Phys. Lett. 96, 191502 (2010); http://dx.doi.org/10.1063/1.3429093 (3 pages) | Cited 2 times

Online Publication Date: 13 May 2010

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An atmospheric pressure air microplasma (APAMP) source was developed under ambient conditions using a magnetic loop at an operating frequency of 740 MHz. A self-igniting, stable APAMP was generated at 9.5 W. Pulse modulation (PM) was applied to the ultra high frequency signal. The effects of PM on self-ignition and operation of the APAMP source were studied by using a square wave modulating signal in the frequency range of 5–30 KHz. With the application of PM on the APAMP, in the best case, the plasma self-ignites and is sustained at 2.5 W.
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52.50.Dg Plasma sources

Characterization and mechanism studies of dielectric barrier discharges generated at atmospheric pressure

Jie Tang, Yixiang Duan, and Wei Zhao

Appl. Phys. Lett. 96, 191503 (2010); http://dx.doi.org/10.1063/1.3430008 (3 pages) | Cited 12 times

Online Publication Date: 14 May 2010

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A dielectric barrier discharge (DBD) device operated at ambient air with an ac power supply was designed and examined. The discharge power and active current of DBD were characterized. Experimental results show that the discharge power does not proportionally increase all along with voltage. Through in-depth analysis of typical waveforms of instantaneous applied voltage and discharge current, and images of microdischarges in the gas gap, it is inferred that considerable reduction in charges transferred through discharge channels is most likely due to recombination and attachment to electronegative molecules, nonuniform highly distorted electric fields, and repulse of more homogeneous electric charges.
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52.80.-s Electric discharges
52.75.-d Plasma devices
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Viability of using near infrared PbS quantum dots as active materials in luminescent solar concentrators

G. V. Shcherbatyuk, R. H. Inman, C. Wang, R. Winston, and S. Ghosh

Appl. Phys. Lett. 96, 191901 (2010); http://dx.doi.org/10.1063/1.3422485 (3 pages) | Cited 19 times

Online Publication Date: 11 May 2010

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The performance of chemically synthesized lead sulfide (PbS) quantum dots (QDs) in planar, nontracking luminescent solar concentrators (LSCs) is evaluated using spectroscopic and photovoltaic techniques. Spatially resolved measurements are used to investigate and analyze the role of reduced self-absorption on the LSC efficiency. From comparative measurements of samples with Rhodamine B and CdSe/ZnS QDs it is established that PbS LSCs generate nearly twice the photocurrent in silicon cells than the other materials, achieving an integrated optical efficiency of 12.6%. This is attributed primarily to the broadband absorption of PbS which allows optimum harvesting of the solar spectrum.
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88.40.H- Solar cells (photovoltaics)
73.63.Kv Quantum dots
72.40.+w Photoconduction and photovoltaic effects
78.40.Fy Semiconductors
78.30.Hv Other nonmetallic inorganics

Biexciton emission from sol-gel ZnMgO nanopowders

C. H. Chia, Y. J. Lai, W. L. Hsu, T. C. Han, J. W. Chiou, Y. M. Hu, Y. C. Lin, W. C. Fan, and W. C. Chou

Appl. Phys. Lett. 96, 191902 (2010); http://dx.doi.org/10.1063/1.3428780 (3 pages) | Cited 4 times

Online Publication Date: 11 May 2010

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We studied the power-dependent photoluminescence of Zn1−xMgxO nanopowders grown by sol-gel method, at temperature T = 100 K. At moderate optical pumping intensity, a nonlinear emission band due to the radiative recombination of free biexcitons was detected. We found that the free biexciton binding energies of Zn1−xMgxO nanopowder (0.01 ≤ x ≤ 0.05) are nearly constant (13.5±1.5 meV).
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Hx Other solid inorganic materials
71.35.-y Excitons and related phenomena
71.20.Nr Semiconductor compounds
71.15.Nc Total energy and cohesive energy calculations

Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)

C. Gilfert, E.-M. Pavelescu, and J. P. Reithmaier

Appl. Phys. Lett. 96, 191903 (2010); http://dx.doi.org/10.1063/1.3428956 (3 pages) | Cited 3 times

Online Publication Date: 11 May 2010

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The formation process of InAs quantum dashes and quantum dots (QDs) grown on quaternary InAlGaAs surfaces lattice-matched to n-type InP(100) are investigated. A clear trend of the InAs to form dashes or dots depending on the species of supplied arsenic could be demonstrated. Using As4, elongated quantum dashes can be observed. Changing the growth mode to As2 molecules enables a shape transition from dashes to dome-shaped QDs. The dot ensembles exhibit improved photoluminescence (PL) intensity and linewidth over their elongated counterparts. With this basic concept, low temperature PL linewidths as low as 23 meV have been achieved.
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68.65.Hb Quantum dots (patterned in quantum wells)
64.70.Nd Structural transitions in nanoscale materials
81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots

The effect of nanocrystallite size in monoclinic HfO2 films on lattice expansion and near-edge optical absorption

M. C. Cisneros-Morales and C. R. Aita

Appl. Phys. Lett. 96, 191904 (2010); http://dx.doi.org/10.1063/1.3428965 (3 pages) | Cited 10 times

Online Publication Date: 11 May 2010

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Nanocrystalline monoclinic HfO2 films were sputter deposited on fused silica substrates, air annealed at 573 to 1273 K to affect crystallite growth, and analyzed by x-ray diffraction and spectrophotometry. Lattice expansion occurs with diminishing crystallite size. O 2p→Hf 5d interband absorption dominates the optical edge at energy E ≥ 6.24 eV, with an optical band gap, Eo = 5.48±0.023, which is independent of crystallite size. However, the strength of a localized resonant band, with onset at 5.65 eV and maximum at 5.94 eV, is affected by crystallite size. Its polaronic origin in a perfect HfO2 lattice is discussed.
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61.46.Hk Nanocrystals
77.55.D- High-permittivity gate dielectric films
81.16.-c Methods of micro- and nanofabrication and processing
81.15.Cd Deposition by sputtering
68.55.aj Insulators
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters

Structural defects working as active oxygen-reduction sites in partially oxidized Ta-carbonitride core-shell particles probed by using surface-sensitive conversion-electron-yield x-ray absorption spectroscopy

Hideto Imai, Masashi Matsumoto, Takashi Miyazaki, Shinji Fujieda, Akimitsu Ishihara, Motoko Tamura, and Ken-ichiro Ota

Appl. Phys. Lett. 96, 191905 (2010); http://dx.doi.org/10.1063/1.3430543 (3 pages) | Cited 8 times

Online Publication Date: 12 May 2010

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We analyzed the local structure of the surface Ta-oxide phase of TaCN/Ta2O5 core-shell particles that have a high oxygen reduction activity by using surface-sensitive conversion-electron-yield x-ray absorption spectroscopy, suppressing the contribution from the TaCN cores. The radial structure analysis revealed that the catalytically-active Ta2O5 phase in the TaCN/Ta2O5 particle surface contains oxygen-vacancy defects with shorter Ta–O bonds leading to the slight expansion of the first Ta–O shell. Such oxygen defects are likely responsible for the oxygen reduction capability by creating electronically favorable oxygen adsorption sites and electron conduction pathways.
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71.55.Ht Other nonmetals
68.35.bt Other materials
61.72.jd Vacancies
78.70.Dm X-ray absorption spectra
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Kinetic roughening of a ZnO grain boundary

Sung Bo Lee, Young-Min Kim, Dong-Su Ko, Tae-Young Ahn, Young-Woon Kim, and Jucheol Park

Appl. Phys. Lett. 96, 191906 (2010); http://dx.doi.org/10.1063/1.3428369 (3 pages) | Cited 1 time

Online Publication Date: 12 May 2010

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Using a model ZnO bicrystal, we examine grain boundary kinetics by high-resolution transmission electron microscopy. The grain boundary undergoes a transition from atomically stepped to undulating appearances with increasing driving force for migration at a given temperature, producing clear evidence that grain boundaries undergo kinetic roughening.
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61.72.Mm Grain and twin boundaries
79.20.Uv Electron energy loss spectroscopy
61.72.Cc Kinetics of defect formation and annealing

Thermal kinetics of OH− ions in LiNbO3:Mg crystals above the photorefractive threshold

K. Lengyel, L. Kovács, Á. Péter, K. Polgár, G. Corradi, A. Baraldi, and R. Capelletti

Appl. Phys. Lett. 96, 191907 (2010); http://dx.doi.org/10.1063/1.3428772 (3 pages)

Online Publication Date: 12 May 2010

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OH stretching vibrations in LiNbO3 (LN) crystals having various Li/Nb ratios and doped with Mg above the photorefractive threshold concentration were investigated in the 20–500 °C temperature range. Beside the 3534 cm−1 above-threshold band another peak at about 3465 cm−1, known from below-threshold stoichiometric LN, was found to appear at a temperature depending on the Mg surplus concentration and grow further with increasing temperature at the expense of the 3534 cm−1 band. The energy difference between the OH− ions was determined to be ΔE = 0.25±0.02 eV independently from the composition and Mg concentration. A kinetic model describing the thermal process predicts a linear Mg surplus dependence of the ratio of band areas at a given temperature.
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78.20.Mg Photorefractive effects
61.66.Bi Elemental solids
61.66.Dk Alloys
78.30.Hv Other nonmetallic inorganics

Radiation-induced metastable ordered phase in gallium nitride

Manabu Ishimaru

Appl. Phys. Lett. 96, 191908 (2010); http://dx.doi.org/10.1063/1.3430046 (3 pages)

Online Publication Date: 13 May 2010

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Energetic particle irradiation is one of the useful ways for realizing metastable phases far from the equilibrium state. In the present study, we performed electron-beam-irradiation into gallium nitride (GaN) with a wurtzite structure and examined its structural changes using transmission electron microscopy. It was found that superlattice Bragg reflections appear in the electron diffraction patterns of the irradiated GaN. This suggests that the wurtzite GaN transforms to another crystalline structure with atomic ordering.
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61.82.Fk Semiconductors
68.55.ag Semiconductors

Optical and microstructural properties versus indium content in InxGa1−xN films grown by metal organic chemical vapor deposition

A. Gokarna, A. Gauthier-Brun, W. Liu, Y. Androussi, E. Dumont, E. Dogheche, J. H. Teng, S. J. Chua, and D. Decoster

Appl. Phys. Lett. 96, 191909 (2010); http://dx.doi.org/10.1063/1.3425761 (3 pages) | Cited 6 times

Online Publication Date: 13 May 2010

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We present comparative investigations of single phase InxGa1−xN alloys for a varying In content (x = 0.07 to 0.14) grown by metal organic chemical vapor deposition (MOCVD) technique. While the composition was determined using secondary ion mass spectroscopy, we have investigated the microstructures in InxGa1−xN/GaN films by using transmission electron microscopy and correlated these with the refractive index of the material. Based on ellipsometric analysis of the films, the dispersion of optical indices for InxGa1−xN films is determined by using Tauc–Lorentz dispersion equations.
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78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
81.05.Ea III-V semiconductors

Epitaxial graphene on cubic SiC(111)/Si(111) substrate

A. Ouerghi, A. Kahouli, D. Lucot, M. Portail, L. Travers, J. Gierak, J. Penuelas, P. Jegou, A. Shukla, T. Chassagne, and M. Zielinski

Appl. Phys. Lett. 96, 191910 (2010); http://dx.doi.org/10.1063/1.3427406 (3 pages) | Cited 24 times

Online Publication Date: 14 May 2010

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Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)/Si(111) substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The Raman spectroscopy studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples.
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68.55.Nq Composition and phase identification
68.55.jd Thickness
79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
78.30.Na Fullerenes and related materials
81.05.uf Graphite

Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition

Z. T. Chen, Y. Sakai, and T. Egawa

Appl. Phys. Lett. 96, 191911 (2010); http://dx.doi.org/10.1063/1.3430737 (3 pages) | Cited 7 times

Online Publication Date: 14 May 2010

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Temperature-dependent photoluminescence (PL) measurements have been performed on high-quality InAlN layers lattice-matched (LM) to GaN with different thicknesses. It is found that the PL is consisted of two components denoted as IH (high-energy side) and IL (low-energy side), respectively. IH is attributed to exciton luminescence of bulk InAlN with linewidth comparable to those calculated under the assumption of perfect random alloy. While IL is attributed to the emission from the quantum-dotlike structure on the surface of InAlN, revealing the importance of surface effect to the investigations related to InAlN LM to GaN.
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78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
71.35.-y Excitons and related phenomena
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Interface effect on the photocurrent: A comparative study on Pt sandwiched (Bi3.7Nd0.3)Ti3O12 and Pb(Zr0.2Ti0.8)O3 films

Dawei Cao, Jie Xu, Liang Fang, Wen Dong, Fengang Zheng, and Mingrong Shen

Appl. Phys. Lett. 96, 192101 (2010); http://dx.doi.org/10.1063/1.3427500 (3 pages) | Cited 8 times

Online Publication Date: 10 May 2010

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We investigated and compared the photoelectric behavior of the Pt sandwiched (Bi3.7Nd0.3)Ti3O12 (BNT) and Pb(Zr0.2Ti0.8)O3 (PZT) films deposited by sol-gel method. Based on the analysis of the photocurrent and I-V characteristics, the top and bottom Pt/film interface Schottky barriers are found to be more symmetric in BNT, compared to that in PZT. The photocurrents originated from the depolarization field due to the alignment of ferroelectric polarization are different, although the polarizations of the two films are about the same. The mechanism behind the origin of the different photocurrent behaviors between Pt/BNT/Pt and Pt/PZT/Pt capacitors was discussed.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
72.40.+w Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions
77.22.Ej Polarization and depolarization
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
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