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Applied Physics Letters / Volume 96 / Issue 19 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 193112 (2010); http://dx.doi.org/10.1063/1.3428359 (3 pages)

Defect reduction in silicon nanoparticles by low-temperature vacuum annealing

S. Niesar1, A. R. Stegner1, R. N. Pereira2, M. Hoeb1, H. Wiggers3, M. S. Brandt1, and M. Stutzmann1

1Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany
2Departamento de Física and I3N, Universidade de Aveiro, 3810-193 Aveiro, Portugal
3Institut für Verbrennung und Gasdynamik and CeNIDE, Center for NanoIntegration Duisburg-Essen, Universität Duisburg-Essen, Lotharstr. 1, 47048 Duisburg, Germany

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(Received 15 March 2010; accepted 19 April 2010; published online 13 May 2010)

Using electron paramagnetic resonance, we find that vacuum annealing at 200 °C leads to a significant reduction in the silicon dangling bond (Si-db) defect density in silicon nanoparticles (Si-NPs). The best improvement of the Si-db density by a factor of 10 is obtained when the vacuum annealing is combined with an etching step in hydrofluoric acid (HF), whereas HF etching alone only removes the Si-dbs at the Si/SiO2 interface. The reduction in the Si-db defect density is confirmed by photothermal deflection spectroscopy and photoconductivity measurements on thin Si-NPs films.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, elemental semiconductors, etching, nanoparticles, paramagnetic resonance, photoconductivity, photothermal spectroscopy, semiconductor thin films, silicon, silicon compounds

PACS

  • 61.46.Df

    Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

  • 61.72.Cc

    Kinetics of defect formation and annealing

  • 76.30.-v

    Electron paramagnetic resonance and relaxation

  • 73.63.Bd

    Nanocrystalline materials

  • 76.30.Mi

    Color centers and other defects

  • 81.65.Cf

    Surface cleaning, etching, patterning

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3428359

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    Y. Kanemitsu, S. Okamoto, M. Otobe, and S. Oda, Phys. Rev. B 55, R7375 (1997).

    D. Jurbergs, E. Rogojina, L. Mangolini, and U. Kortshagen, Appl. Phys. Lett. 88, 233116 (2006)APPLAB000088000023233116000001.

    N. C. Greenham, X. Peng, and A. P. Alivisatos, Phys. Rev. B 54, 17628 (1996).

    R. Dietmueller, A. R. Stegner, R. Lechner, S. Niesar, R. R. Pereira, M. S. Brandt, A. Ebbers, M. Trocha, H. Wiggers, and M. Stutzmann, Appl. Phys. Lett. 94, 113301 (2009)APPLAB000094000011113301000001.

    V. G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, and H. Wiggers, J. Appl. Phys. 97, 084306 (2005)JAPIAU000097000008084306000001.

    A. R. Stegner, R. N. Pereira, R. Lechner, K. Klein, H. Wiggers, M. Stutzmann, and M. S. Brandt, Phys. Rev. B 80, 165326 (2009).

    X. D. Pi, R. Gresback, R. W. Liptak, S. A. Campbell, and U. Kortshagen, Appl. Phys. Lett. 92, 123102 (2008)APPLAB000092000012123102000001.

    A. Stesmans, M. Jivanescu, S. Godefroo, and M. Zacharias, Appl. Phys. Lett. 93, 023123 (2008)APPLAB000093000002023123000001.

    R. Lechner, A. R. Stegner, R. N. Pereira, R. Dietmueller, M. S. Brandt, A. Ebbers, M. Trocha, H. Wiggers, and M. Stutzmann, J. Appl. Phys. 104, 053701 (2008)JAPIAU000104000005053701000001.

    E. H. Poindexter, P. J. Caplan, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 52, 879 (1981)JAPIAU000052000002000879000001.

    A. Stesmans and V. V. Afanas'ev, J. Appl. Phys. 83, 2449 (1998)JAPIAU000083000005002449000001.

    M. Stutzmann and D. K. Biegelsen, Phys. Rev. B 40, 9834 (1989).

    P. Gupta, V. L. Colvin, and S. M. George, Phys. Rev. B 37, 8234 (1988).

    G. W. Trucks, K. Raghavachari, G. S. Higashi, and Y. J. Chabal, Phys. Rev. Lett. 65, 504 (1990).

    W. B. Jackson and N. M. Am, Phys. Rev. B 25, 5559 (1982).

    J. D. Holbech, B. B. Nielsen, R. Jones, P. Sitch, and S. Öberg, Phys. Rev. Lett. 71, 875 (1993).


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