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10 May 2010

Volume 96, Issue 19, Articles (19xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 193101 (2010); http://dx.doi.org/10.1063/1.3425776 (3 pages)

J. J. Zhang, N. Hrauda, H. Groiss, A. Rastelli, J. Stangl, F. Schäffler, O. G. Schmidt, and G. Bauer
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Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells

Liang Fang, Seung Jae Baik, Koeng Su Lim, Seung Hyup Yoo, Myung Soo Seo, Sang Jung Kang, and Jung Won Seo

Appl. Phys. Lett. 96, 193501 (2010); http://dx.doi.org/10.1063/1.3427396 (3 pages) | Cited 8 times

Online Publication Date: 11 May 2010

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A thermally evaporated p-type amorphous tungsten oxide (p-a-WO3) film was introduced as a buffer layer between SnO2 and p-type amorphous silicon carbide (p-a-SiC) of pin-type amorphous silicon based solar cells. Using the Schottky barrier model, it is shown that the p-a-WO3 layer lowered the Schottky barrier height, which enhanced the open circuit voltage and the blue response compared to a bufferless cell. By inserting a 2-nm-thick p-a-WO3 layer between SnO2 and an 8-nm-thick p-a-SiC layer, the conversion efficiency was increased by 7.3% compared to the optimized bufferless cell only with a 10-nm-thick p-a-SiC window layer.
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88.40.jj Silicon solar cells
88.40.H- Solar cells (photovoltaics)

Resistance switching of Cu/SiO2 memory cells studied under voltage and current-driven modes

Y. Bernard, P. Gonon, and V. Jousseaume

Appl. Phys. Lett. 96, 193502 (2010); http://dx.doi.org/10.1063/1.3428779 (3 pages) | Cited 5 times

Online Publication Date: 11 May 2010

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Resistance switching in Cu/SiO2-based conductive-bridging random access memories is studied under voltage and current-driven modes. These two modes are used to study memory cycling and time-dependent switching. Voltage-current (V-I) cycles (logarithmic current ramp) are compared to I-V cycles (linear voltage ramp). The Off-On transition in V-I cycles is governed by device capacitance. The Off-On switching time (in the 10−1–103 s range) was studied under constant voltage and constant current stresses. The switching time varies as exp(V0/V) and as 1/I. Switching kinetics is discussed considering a Fowler–Nordheim tunneling injection law and a field-induced nucleation theory.
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84.30.Sk Pulse and digital circuits
73.40.Ns Metal-nonmetal contacts

The effect of traps on the performance of graphene field-effect transistors

J. Zhu, R. Jhaveri, and J. C. S. Woo

Appl. Phys. Lett. 96, 193503 (2010); http://dx.doi.org/10.1063/1.3428785 (3 pages) | Cited 6 times

Online Publication Date: 11 May 2010

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This paper studies the performance degradation of graphene field-effect transistors due to the presence of traps. The mobile charge modulation by gate voltage is degraded because of immobile trapped charges. As a result the current is reduced and the on/off ratio is decreased. Extracted mobility using transconductance method is shown to be underestimated considerably due to the effect of traps.
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85.30.Tv Field effect devices

Acoustic electromechanical energy loss mechanism for suspended micro- and nanoelectromechanical resonators

André Gusso

Appl. Phys. Lett. 96, 193504 (2010); http://dx.doi.org/10.1063/1.3428786 (3 pages) | Cited 1 time

Online Publication Date: 13 May 2010

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An acoustic electromechanical energy loss mechanism, relevant for suspended micro- and nanoelectromechanical resonators, is investigated theoretically. The energy loss results from the conversion of the mechanical energy from the vibration of the resonator into acoustic waves due to the coupling between the resonator and nearby structures resulting from electrostatic forces caused by the applied voltage bias. Analytical expressions are derived for the quality factor of cantilever and bridge resonators in close proximity to an underlying substrate. By comparison with experimental results it is concluded that such mechanism can be a dominant source of dissipation for practical devices.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems

Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device

Hsin-Hung Huang, Wen-Chieh Shih, and Chih-Huang Lai

Appl. Phys. Lett. 96, 193505 (2010); http://dx.doi.org/10.1063/1.3429024 (3 pages) | Cited 7 times

Online Publication Date: 13 May 2010

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Nonpolar resistive switching (RS), which is the coexistence of unipolar and bipolar RS characteristics, in the Pt/MgO/Pt memory device with the nonforming nature is demonstrated. The nonforming nature is ascribed to the relatively high defect density of the MgO film deposited by using the ion beam sputtering in Ar atmosphere. The results of Auger electron spectroscopy and x-ray photoelectron spectroscopy analyses combing with the temperature dependence of resistance suggest that metallic Mg filaments are formed in the low resistance state. The voltage-polarity-independent RESET process implies that filaments may be ruptured by local Joule heating, leading to nonpolar characteristics.
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84.30.Sk Pulse and digital circuits

The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature-illumination stress

Ji Sim Jung, Kyoung Seok Son, Kwang-Hee Lee, Joon Seok Park, Tae Sang Kim, Jang-Yeon Kwon, Kwun-Bum Chung, Jin-Seong Park, Bonwon Koo, and Sangyun Lee

Appl. Phys. Lett. 96, 193506 (2010); http://dx.doi.org/10.1063/1.3429588 (3 pages) | Cited 11 times

Online Publication Date: 14 May 2010

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The threshold voltage instability (Vth) in indium-gallium-zinc oxide thin film transistor was investigated with disparate SiNx gate insulators under bias-temperature-illumination stress. As SiNx film stress became more tensile, the negative shift in Vth decreased significantly from −14.34 to −6.37 V. The compressive films exhibit a nitrogen-rich phase, higher hydrogen contents, and higher N–H bonds than tensile films. This suggests that the higher N–H related traps may play a dominant role in the degradation of the devices, which may provide and/or generate charge trapping sites in interfaces and/or SiNx insulators. It is anticipated that the appropriate optimization of gate insulator properties will help to improve device reliability.
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85.30.Tv Field effect devices
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