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10 May 2010

Volume 96, Issue 19, Articles (19xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 193101 (2010); http://dx.doi.org/10.1063/1.3425776 (3 pages)

J. J. Zhang, N. Hrauda, H. Groiss, A. Rastelli, J. Stangl, F. Schäffler, O. G. Schmidt, and G. Bauer
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Charge-induced wetting of aerosols

Byung Mook Weon and Jung Ho Je

Appl. Phys. Lett. 96, 194101 (2010); http://dx.doi.org/10.1063/1.3430007 (3 pages)

Online Publication Date: 12 May 2010

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Ionization often changes natural material properties such as wettability; this phenomenon is important for aerosols or tiny droplets in natural and industrial processes. We estimate possible wettability changes by ionization in atmospheric aerosols and cloud droplets by analyzing reliable measurements of charge densities based on a general physical model. This estimation shows that atmospheric aerosols could have charge densities larger than 103 μm−2, indicating significant wettability changes. Our finding would be important to evaluate possible effects of cosmic rays on cloud formation in terms of ionization rates.
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68.08.Bc Wetting
68.03.Cd Surface tension and related phenomena
92.60.Mt Particles and aerosols
92.60.Ls Ion chemistry of the atmosphere
92.60.Nv Cloud physics and chemistry

Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network

Seiya Kasai, Kensuke Miura, and Yuta Shiratori

Appl. Phys. Lett. 96, 194102 (2010); http://dx.doi.org/10.1063/1.3428784 (3 pages) | Cited 9 times

Online Publication Date: 12 May 2010

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Stochastic resonance in a summing network with varied thresholds was investigated using GaAs-based etched nanowire field-effect transistors having different threshold voltages. The network’s response adapted to input offset fluctuations in the range of the threshold voltage variation and the network could detect a weak signal without any adjustment of the input offset or the addition of high noise. The observed adaptability resulted from a widened dynamic range of the system due to signal decomposition and reconstruction by multiple thresholds together with the output summation process.
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84.30.-r Electronic circuits

A high frequency GaN Lamb-wave sensor device

A. K. Pantazis, E. Gizeli, and G. Konstantinidis

Appl. Phys. Lett. 96, 194103 (2010); http://dx.doi.org/10.1063/1.3427484 (3 pages) | Cited 6 times

Online Publication Date: 13 May 2010

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Lamb-wave devices are characterized by high sensitivity to surface perturbations due to acoustic energy confinement in a thin piezoelectric membrane. In this paper, a Lamb-wave delay line device based on a single crystalline GaN membrane is presented. The observed operating frequency of 178.82 MHz was found to be in excellent agreement with numerical analysis predictions. The device as a chemical sensor was evaluated during the application of various concentrations of glycerol on the device surface; its ability to operate as a biosensor was also assessed during the detection of the specific binding of a protein (IgG) to the device surface.
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43.58.-e Acoustical measurements and instrumentation
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
87.14.E- Proteins

Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to 1.55 μm excitation

C. D. Wood, O. Hatem, J. E. Cunningham, E. H. Linfield, A. G. Davies, P. J. Cannard, M. J. Robertson, and D. G. Moodie

Appl. Phys. Lett. 96, 194104 (2010); http://dx.doi.org/10.1063/1.3427191 (3 pages) | Cited 10 times

Online Publication Date: 14 May 2010

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We demonstrate the generation of broadband terahertz (THz) frequency radiation from photoconductive emitters formed from Fe-doped InGaAs (Fe:InGaAs), grown by metal-organic chemical vapor deposition, following pulsed (femtosecond) laser excitation at wavelengths ranging from 830 nm to 1.55 μm. The Fe is incorporated epitaxially during growth, giving precise control over the doping level. Using both single-crystal ZnTe and GaP electro-optic detectors over the same wavelength range, the emission spectra from several Fe:InGaAs wafers with different Fe content were measured, with THz emission from all wafers showing bandwidths in excess of 2.0 THz. The THz output power was found to be strongly dependant on the Fe content, the thickness of the Fe:InGaAs layer, and the excitation wavelength.
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78.70.Gq Microwave and radio-frequency interactions
78.66.Fd III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
81.05.Ea III-V semiconductors
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