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4 Jan 2010

Volume 96, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 96, 013107 (2010); http://dx.doi.org/10.1063/1.3280900 (3 pages)

L. Fernández, M. Corso, F. Schiller, M. Ilyn, M. Holder, and J. E. Ortega
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Twinning rotation and ferroelectric behavior of epitaxial BiFeO3 (001) thin film

Huajun Liu, Ping Yang, Kui Yao, and John Wang

Appl. Phys. Lett. 96, 012901 (2010); http://dx.doi.org/10.1063/1.3276543 (3 pages) | Cited 9 times

Online Publication Date: 4 January 2010

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A twinning rotation structure is revealed by reciprocal space mappings obtained from synchrotron X-ray diffraction for the epitaxial BiFeO3 thin film that was grown on (001) SrTiO3 substrate. The lattice strain is not fully relaxed at a film thickness of 720 nm. The structure is indexed as a monoclinic with lattice parameters a = 5.610(1) Å, b = 5.529(1) Å, c = 4.031(1) Å, and β = 89.34(1)°. The twinning rotation leads to an enhanced remanent polarization (2Pr = 164 μC/cm2, 2Ec = 510 kV/cm) and greatly reduced leakage current density of 1.2×10−6 A/cm2 at 100 kV/cm.
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77.55.fp Other ferroelectric films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.72.Mm Grain and twin boundaries
77.22.Ej Polarization and depolarization
68.55.-a Thin film structure and morphology
75.70.Ak Magnetic properties of monolayers and thin films

The role of La surface chemistry in the passivation of Ge

A. Dimoulas, D. Tsoutsou, Y. Panayiotatos, A. Sotiropoulos, G. Mavrou, S. F. Galata, and E. Golias

Appl. Phys. Lett. 96, 012902 (2010); http://dx.doi.org/10.1063/1.3284655 (3 pages) | Cited 23 times

Online Publication Date: 4 January 2010

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The oxidation of a Ge surface by molecular oxygen in the presence of ultrathin La, Al, and Hf layers was examined by in situ x-ray photoelectron spectroscopy. Upon exposure to O2, clean bare Ge and Hf-covered or Al-covered Ge surfaces show no Ge–O bond formation. On the contrary, a La-covered Ge surface strongly reacts with O2 forming a stable germanate LaGeOx compound. This has a beneficial side effect for the interface because the formation of volatile GeO is suppressed, resulting in the good passivating properties of LaGeOx. The photoemission results are correlated with the oxygen density differences in the corresponding oxides.
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81.65.Rv Passivation
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.65.Mq Oxidation
81.05.Cy Elemental semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of Pt–ZnO–Pb(Zr0.2Ti0.8)O3–Pt heterostructures

L. Pintilie, C. Dragoi, R. Radu, A. Costinoaia, V. Stancu, and I. Pintilie

Appl. Phys. Lett. 96, 012903 (2010); http://dx.doi.org/10.1063/1.3284659 (3 pages) | Cited 5 times

Online Publication Date: 4 January 2010

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Pt–ZnO–Pb(Zr0.2Ti0.8)O3–Pt (PZT-ZnO) heterostructures were fabricated by using a sol-gel process. Capacitance-voltage measurements performed on a wide temperature range (20–450 K) have revealed the presence of a hysteresis that undergo a change of direction from clockwise at temperatures below 350 K to counter-clockwise at higher temperatures. In the first case, the hysteresis is produced by charge injection, similar to the case of classical metal-oxide-semiconductor capacitors. In the last case, the hysteresis is the fingerprint of polarization reversal, as reported for metal-ferroelectric-semiconductor (MFS) structures based on n-Si. The memory window at 450 K is about 6 V. This result suggests that PZT-ZnO MFS heterostructures can be used for memory devices working at elevated temperatures, in which the ZnO plays the role of the semiconductor.
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77.80.Dj Domain structure; hysteresis
77.55.fg Pb(Zr,Ti)O3-based films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.22.Ej Polarization and depolarization
85.50.Gk Non-volatile ferroelectric memories
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Structure and electrical properties of Bi3.15Nd0.85Ti3O12 nanofibers synthesized by electrospinning and sol-gel method

M. Liao, X. L. Zhong, J. B. Wang, S. H. Xie, and Y. C. Zhou

Appl. Phys. Lett. 96, 012904 (2010); http://dx.doi.org/10.1063/1.3276688 (3 pages) | Cited 6 times

Online Publication Date: 5 January 2010

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Bi3.15Nd0.85Ti3O12 (BNT) nanofibers with radii in the range of 30–200 nm have been prepared by the electrospinning and sol-gel method, and the structure and morphology of the nanofibers were characterize by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. The phase transition and piezoelectric characteristics of the BNT nanofibers were performed by thermal analysis and scanning probe microscopy, respectively. The BNT nanofiber exhibits an effective piezoelectric coefficient of 89 pm/V and a Curie temperature of 500 °C, which are higher than that of the BNT bulk.
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78.30.Hv Other nonmetallic inorganics
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.16.Ta Atom manipulation
77.65.Bn Piezoelectric and electrostrictive constants
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Systematic variations in structural and electronic properties of BiFeO3 by A-site substitution

Zhen Zhang, Ping Wu, Lang Chen, and Junling Wang

Appl. Phys. Lett. 96, 012905 (2010); http://dx.doi.org/10.1063/1.3279137 (3 pages) | Cited 11 times

Online Publication Date: 5 January 2010

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Systematic variations in the structural and electronic properties of BiFeO3 with A-site substitutions were studied using first-principles density functional theory calculations. It is found that the ferroelectric distortion of BiFeO3 with group IIIA element (Sc3+, Y3+, and La3+) substitutions is significantly affected by the hybridization between substitute d states and oxygen 2p states, while that with group VB element (Sb3+) substitution is stabilized by the s2 lone pair electrons. For both groups, the substitute with smaller ionic size and larger electronegativity causes more significant off-center displacement and narrower band gap.
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71.20.Ps Other inorganic compounds
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
75.85.+t Magnetoelectric effects, multiferroics
77.80.-e Ferroelectricity and antiferroelectricity

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

Eun Ji Kim, Lingquan Wang, Peter M. Asbeck, Krishna C. Saraswat, and Paul C. McIntyre

Appl. Phys. Lett. 96, 012906 (2010); http://dx.doi.org/10.1063/1.3281027 (3 pages) | Cited 49 times

Online Publication Date: 6 January 2010

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Charge-trapping defects in Pt/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and their passivation by hydrogen are investigated in samples with abrupt oxide/III-V interfaces. Tunneling of electrons into defect states (border traps) in the atomic layer deposited Al2O3 near the oxide/semiconductor interface is found to control the frequency dispersion of the capacitance in accumulation. Hydrogen anneals effectively passivate border traps in the oxide, in addition to some of the midgap states that control carrier generation in the channel. This is evident in the reduced frequency dispersion in accumulation, reduced capacitance-voltage stretch-out through depletion, and suppression of the inversion carrier response in capacitance-voltage measurements.
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84.32.Tt Capacitors
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

A complete set of material properties of single domain 0.26Pb(In1/2Nb1/2)O3–0.46Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 single crystals

Xiaozhou Liu, Shujun Zhang, Jun Luo, Thomas R. Shrout, and Wenwu Cao

Appl. Phys. Lett. 96, 012907 (2010); http://dx.doi.org/10.1063/1.3275803 (3 pages) | Cited 19 times

Online Publication Date: 6 January 2010

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Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN-PMN-PT) single crystals have been developed recently, which can increase the operating temperature by at least 20 °C compared to PMN-PT crystals. We have measured a complete set of material properties of single domain PIN-PMN-PT crystal, which is urgently needed in theoretical studies and electromechanical device designs using this crystal. Because the rotated values of d33∗ = 1122 pC/N and k33∗ = 89% along [001]c calculated using the single domain data obtained here are in good agreement with the [001]c poled multidomain PIN-PMN-PT crystals, one may conclude that the physical origin of the ultrahigh piezoelectric properties mainly come from orientation effect.
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77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects

Nanoscale domain growth dynamics of ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin films

Yunseok Kim, Wooyoung Kim, Hyunwoo Choi, Seungbum Hong, Hyungsoo Ko, Heechul Lee, and Kwangsoo No

Appl. Phys. Lett. 96, 012908 (2010); http://dx.doi.org/10.1063/1.3290247 (3 pages) | Cited 10 times

Online Publication Date: 7 January 2010

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Nanoscale domain growth dynamics of ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin films were investigated by piezoresponse force microscopy. A 90 nm thick ferroelectric polymer thin films were fabricated on Au substrate by spin-coating method. The domain size of nanoscale dot pattern was linearly proportional to logarithmic value of the pulse width. However there was a significant asymmetry in nucleation and lateral domain growth depending on the voltage polarity, which implies the existence of the preferred polarization states. The obtained activation field indicates the nucleation-limited domain switching behaviors of ferroelectric polymer thin films.
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68.55.am Polymers and organics
81.16.Rf Micro- and nanoscale pattern formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
77.84.Jd Polymers; organic compounds
77.22.Ej Polarization and depolarization

Oxygen concentration and its effect on the leakage current in BiFeO3 thin films

H. Yang, Y. Q. Wang, H. Wang, and Q. X. Jia

Appl. Phys. Lett. 96, 012909 (2010); http://dx.doi.org/10.1063/1.3291044 (3 pages) | Cited 21 times

Online Publication Date: 8 January 2010

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Epitaxial c-axis oriented BiFeO3 (BFO) films were fabricated on (001) oriented SrTiO3 substrates by pulsed laser deposition. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen concentration of as-deposited and annealed BFO films. Compared to the ideal stoichiometry of BFO, the as-deposited BFO film shows more than 10% oxygen deficiency. However, postannealing the as-deposited BFO films reduces the oxygen deficiency almost half. The reduced oxygen vacancies in annealed BFO films are believed to be responsible for the different leakage mechanisms and the two orders of magnitude drop in leakage current density.
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77.55.fp Other ferroelectric films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.80.-e Ferroelectricity and antiferroelectricity
77.55.Px Epitaxial and superlattice films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Gh Other heat and thermomechanical treatments

Improved ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin film on single crystal diamond using CaF2 layer

Meiyong Liao, Kiyomi Nakajima, Masataka Imura, and Yasuo Koide

Appl. Phys. Lett. 96, 012910 (2010); http://dx.doi.org/10.1063/1.3291056 (3 pages) | Cited 5 times

Online Publication Date: 8 January 2010

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The authors report the integration of perovskite Pb(Zr0.52,Ti0.48)O3 thin film on single crystal diamond by using a nonoxide single CaF2 buffer layer. The CaF2 buffer layer plays a dual role in the lead zirconate titanate Pb(Zr,Ti)O3 (PZT) film deposition. The first is that the CaF2 layer leads to a preferentially (100)-oriented PZT thin film on diamond, improving the ferroelectric properties significantly. The PZT film exhibits a remanent in-plane polarization of 2Pr = 68 μC/cm2 and a coercive field of 33 kV/cm. The remanent polarization is much larger than that of PZT films deposited on diamond by using SrTiO3/Al2O3 buffer layer. The second is that the CaF2 layer acts as an efficient energy barrier for the metal-ferroelectric-insulator-diamond capacitor due to its wide band gap. The leakage current in the capacitor is reduced to be lower than 10−6 A/cm2 in the forward bias mode.
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73.61.-r Electrical properties of specific thin films
77.80.-e Ferroelectricity and antiferroelectricity
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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