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4 Jan 2010

Volume 96, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 96, 013107 (2010); http://dx.doi.org/10.1063/1.3280900 (3 pages)

L. Fernández, M. Corso, F. Schiller, M. Ilyn, M. Holder, and J. E. Ortega
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Graded composition and valence states in self-forming barrier layers at Cu–Mn/SiO2 interface

Y. Otsuka, J. Koike, H. Sako, K. Ishibashi, N. Kawasaki, S. M. Chung, and I. Tanaka

Appl. Phys. Lett. 96, 012101 (2010); http://dx.doi.org/10.1063/1.3269602 (3 pages) | Cited 9 times

Online Publication Date: 4 January 2010

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A self-forming diffusion barrier (SFB) layer was formed at Cu–Mn/SiO2 interface. Spatial variation of the chemical composition and valence state of the elements in the SFB was investigated in a subnanometer resolution using electron energy loss spectroscopy and transmission electron microscopy. The SFB was found to have a layered structure with graded compositions of nanocrystalline MnO and amorphous MnSiO3. The valence state of Mn was found to be +2 in the MnO layer and gradually increased to +3 in the MnSiO3 layer. The reported dielectric constant of the SFB could be explained by the observed composition and microstructure.
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68.35.Fx Diffusion; interface formation
66.30.-h Diffusion in solids
68.37.Lp Transmission electron microscopy (TEM)
77.22.Ch Permittivity (dielectric function)
82.80.-d Chemical analysis and related physical methods of analysis
79.20.Uv Electron energy loss spectroscopy

A polarity-controllable graphene inverter

Naoki Harada (原田直樹), Katsunori Yagi (八木克典), Shintaro Sato (佐藤信太郎), and Naoki Yokoyama (横山直樹)

Appl. Phys. Lett. 96, 012102 (2010); http://dx.doi.org/10.1063/1.3280042 (3 pages) | Cited 11 times

Online Publication Date: 4 January 2010

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We propose and experimentally demonstrate a functional electron device, which is a polarity-controllable inverter constructed using a four-terminal ambipolar graphene field effect transistor (FET). The FET has two input terminals, both a top gate and a back gate, and the polarity of the FET can be switched by switching the input to the back gate. The slope of the inverter transfer curves can be changed by changing the back-gate voltage. By adding binary digital data and sinusoidal carrier waves into the back gate and the top gate of the inverter, respectively, the one-transistor binary digital phase modulator can be constructed and operated.
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85.65.+h Molecular electronic devices
84.30.Jc Power electronics; power supply circuits
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
85.30.Tv Field effect devices

Unipolar resistive switching effect in YMn1−δO3 thin films

Z. B. Yan, S. Z. Li, K. F. Wang, and J.-M. Liu

Appl. Phys. Lett. 96, 012103 (2010); http://dx.doi.org/10.1063/1.3280380 (3 pages) | Cited 8 times

Online Publication Date: 5 January 2010

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Steady unipolar resistive switching of Pt/YMn1−δO3/Pt MIM structure is investigated. High resistance ratio (>104) of high resistance state (HRS) over low resistance state (LRS) and long retention (>105 s) are achieved. It is suggested that the Joule heating and Poole–Frenkel effect dominate respectively the conduction of the LRS and HRS in high electric field region. The resistive switching is explained by the rupture and formation of conductive filaments in association with the local Joule-heat-induced redox inside YMn1−δO3.
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73.40.Rw Metal-insulator-metal structures
72.20.Ht High-field and nonlinear effects
73.61.Ng Insulators
68.55.aj Insulators
77.80.Fm Switching phenomena
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Blinking suppression of single quantum dots in agarose gel

H. C. Ko, C. T. Yuan, S. H. Lin, and Jau Tang

Appl. Phys. Lett. 96, 012104 (2010); http://dx.doi.org/10.1063/1.3280386 (3 pages) | Cited 7 times

Online Publication Date: 5 January 2010

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Fluorescence blinking is commonly observed in single molecule/particle spectroscopy, but it is an undesirable feature in many applications. We demonstrated that single CdSe/ZnS quantum dots in agarose gel exhibited suppressed blinking behavior. In addition, the long-time exponential bending tail of the power-law blinking statistics was found to be influenced by agarose gel concentration. We suggest that electron transfer from the light state to the dark state might be blocked due to electrostatic surrounding of gel with inherent negatively charged fibers.
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78.67.Hc Quantum dots
82.70.Dd Colloids
82.70.Gg Gels and sols
78.55.Et II-VI semiconductors
78.55.Bq Liquids
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions

Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor

Hiroki Kondo, Shinnya Sakurai, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, and Shigeaki Zaima

Appl. Phys. Lett. 96, 012105 (2010); http://dx.doi.org/10.1063/1.3275706 (3 pages) | Cited 4 times

Online Publication Date: 6 January 2010

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Praseodymium (Pr) oxide films were grown by metal-organic chemical-vapor-deposition (CVD) using Pr(EtCp)3. Using H2O as an oxidant, Pr2O3 films with columnar structures are formed and its C concentration can be reduced to about one-tenth compared with the case using O2. Activation energy of 0.37 eV is derived for this CVD using H2O. This CVD-Pr oxide film deposited at 300 °C has a dielectric constant of 26±3. Furthermore, conduction band offset of 1.0±0.1 eV and trap levels of 0.40±0.02 and 0.22±0.02 eV in the CVD-Pr2O3/Si structure were also determined by current conduction characteristics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
71.20.Ps Other inorganic compounds
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.D- High-permittivity gate dielectric films
68.55.aj Insulators
77.22.Ch Permittivity (dielectric function)

Influence of heavy doping on Seebeck coefficient in silicon-on-insulator

H. Ikeda and F. Salleh

Appl. Phys. Lett. 96, 012106 (2010); http://dx.doi.org/10.1063/1.3282783 (3 pages) | Cited 3 times

Online Publication Date: 6 January 2010

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We measured the Seebeck coefficient of heavily P-doped silicon-on-insulator layers with P concentrations above 1×1019 cm−3. The coefficient decreased with increasing P concentration, and with a peak of the Seebeck coefficient around 5×1019 cm−3. We calculated the density-of-states (DOS) of bulk Si based on theoretical models of impurity-band formation, ionization-energy shift, and conduction-band tailing. The calculated impurity-concentration dependence of the energy derivative of the DOS at the Fermi energy also showed a peak. Consequently, the Seebeck coefficient of the heavily doped Si is ruled by the DOS distribution, similar to metallic materials.
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73.50.Lw Thermoelectric effects
73.61.Cw Elemental semiconductors
61.72.uf Ge and Si
61.72.sd Impurity concentration
71.20.Mq Elemental semiconductors

Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces

T. Haimoto, T. Hoshii, S. Nakagawa, M. Takenaka, and S. Takagi

Appl. Phys. Lett. 96, 012107 (2010); http://dx.doi.org/10.1063/1.3269906 (3 pages) | Cited 5 times

Online Publication Date: 7 January 2010

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We have fabricated InP metal-insulator-semiconductor (MIS) structures with direct nitridation of InP surfaces. The nitridation is performed by exposing InP surfaces to electron cyclotron resonance (ECR) N2 plasma. The formation of InP oxynitride layers with the thickness of around 1.5 nm is confirmed by transmission electron microscope images and x-ray photoelectron spectroscopy analysis. It is found that the surface nitridation drastically reduces the hysteresis of the C-V curves of SiO2/oxynitride/InP MIS capacitors, compared with the MIS capacitors without oxynitrides, indicating the reduction of slow traps inside InP native oxides. The nitridation under the rf power of 500 W can lead to the hysteresis down to 10 mV and the VFB shift down to −0.36 V. These results provide the experimental evidences for the effectiveness of ECR N2 plasma nitridation of InP and the insertion of the oxynitrided InP interfacial layers in terms of the InP MIS interface control.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
76.40.+b Diamagnetic and cyclotron resonances
68.37.Lp Transmission electron microscopy (TEM)
79.60.Jv Interfaces; heterostructures; nanostructures
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