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4 Jan 2010

Volume 96, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 96, 013107 (2010); http://dx.doi.org/10.1063/1.3280900 (3 pages)

L. Fernández, M. Corso, F. Schiller, M. Ilyn, M. Holder, and J. E. Ortega
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Efficient spin injection into semiconductor from an Fe/GaOx tunnel injector

H. Saito, J. C. Le Breton, V. Zayets, Y. Mineno, S. Yuasa, and K. Ando

Appl. Phys. Lett. 96, 012501 (2010); http://dx.doi.org/10.1063/1.3282799 (3 pages) | Cited 5 times

Online Publication Date: 4 January 2010

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We examined the electrical injection of spin-polarized electrons into a GaAs-based light-emitting diode structure from a Fe/GaOx tunnel injector whose electron-charge injection efficiency was comparable to that of a conventional Fe/n+-AlGaAs ohmic injector. A high circular polarization of electroluminescence up to 20% was observed at 2 K. The combination of effective spin-and charge-injection efficiencies makes GaOx a promising tunnel barrier for GaAs-based spintronic devices.
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72.25.Dc Spin polarized transport in semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
72.25.Hg Electrical injection of spin polarized carriers

Dependence of magnetic susceptibility on stress in textured polycrystalline Fe81.6Ga18.4 and Fe79.1Ga20.9 Galfenol alloys

A. Mahadevan, P. G. Evans, and M. J. Dapino

Appl. Phys. Lett. 96, 012502 (2010); http://dx.doi.org/10.1063/1.3280374 (3 pages) | Cited 4 times

Online Publication Date: 5 January 2010

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Magnetization and magnetostriction measurements in constant tension and compression as a function of applied magnetic field are reported for 〈100〉 oriented, textured polycrystalline Fe81.6Ga18.4 and Fe79.1Ga20.9 Galfenol alloys. The susceptibility change with stress, or sensitivity, is maximum at zero field for both alloys. The greatest sensitivity is observed for the 18.4 at. % Ga alloy between −10 and +20 MPa, where domain wall motion dominates. The sensitivity is greater for the 20.9 at. % Ga alloy than for the 18.4 at. % Ga alloy below −15 MPa (domain rotation region). The difference in behavior is attributed to a difference in the anisotropy coefficient.
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75.30.Cr Saturation moments and magnetic susceptibilities
75.30.Gw Magnetic anisotropy
75.60.Ch Domain walls and domain structure
75.80.+q Magnetomechanical effects, magnetostriction
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Precise probing spin wave mode frequencies in the vortex state of circular magnetic dots

A. A. Awad, K. Y. Guslienko, J. F. Sierra, G. N. Kakazei, V. Metlushko, and F. G. Aliev

Appl. Phys. Lett. 96, 012503 (2010); http://dx.doi.org/10.1063/1.3268453 (3 pages) | Cited 3 times

Online Publication Date: 5 January 2010

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We report on detailed broadband ferromagnetic resonance measurements of azimuthal and radial spin wave excitations in circular Permalloy dots in the vortex ground state. Dots with aspect ratio (β = height over radius) varied from 0.03 to 0.1 were explored. The frequency splitting of two lowest azimuthal modes was observed. The experimentally observed dependence of the frequency splitting on β was reasonably well described by dynamic splitting model accounting the spin waves and vortex gyrotropic mode interaction.
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75.30.Ds Spin waves
75.50.Tt Fine-particle systems; nanocrystalline materials
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.50.Bb Fe and its alloys
75.78.-n Magnetization dynamics
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)

Induced magnetism of carbon atoms at the graphene/Ni(111) interface

M. Weser, Y. Rehder, K. Horn, M. Sicot, M. Fonin, A. B. Preobrajenski, E. N. Voloshina, E. Goering, and Yu. S. Dedkov

Appl. Phys. Lett. 96, 012504 (2010); http://dx.doi.org/10.1063/1.3280047 (3 pages) | Cited 27 times

Online Publication Date: 5 January 2010

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We report an element-specific investigation of electronic and magnetic properties of the graphene/Ni(111) system. Using x-ray magnetic circular dichroism, the occurrence of an induced magnetism of the carbon atoms in the graphene layer is observed. We attribute this magnetic moment to the strong hybridization between C π and Ni 3d valence band states. The net magnetic moment of carbon in the graphene layer is estimated to be in the range of 0.05–0.1 μB per atom.
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73.20.At Surface states, band structure, electron density of states
68.35.Ct Interface structure and roughness
78.20.Ls Magneto-optical effects
75.30.Cr Saturation moments and magnetic susceptibilities
78.70.Dm X-ray absorption spectra

Adjust the resonance frequency of (Co90Nb10/Ta)n multilayers from 1.4 to 6.5 GHz by controlling the thickness of Ta interlayers

Guozhi Chai (柴国志), Yuancai Yang (阳远才), Jingyi Zhu (朱静怡), Min Lin (林敏), Wenbo Sui (隋文波), Dangwei Guo (郭党委), Xiling Li (李喜玲), and Desheng Xue (薛德胜)

Appl. Phys. Lett. 96, 012505 (2010); http://dx.doi.org/10.1063/1.3290252 (3 pages) | Cited 13 times

Online Publication Date: 7 January 2010

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In this work, the static and high frequency magnetic properties of (Co90Nb10/Ta)n multilayers have been investigated. The results show that the in-plane uniaxial magnetic anisotropy fields can be adjusted from 12 to 520 Oe only by decreasing the thickness of Ta interlayers from 8.0 to 1.8 nm. As a consequence, the resonance frequencies of the multilayers continuously increased from 1.4 to 6.5 GHz. It was found that the changes in the in-plane uniaxial anisotropy field are ascribed to the interlayer interactions among the magnetic layers by investigating the δM(H) curves.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Gw Magnetic anisotropy
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Manipulation of magnetism by electrical field in a real recording system

Tiejun Zhou, S. H. Leong, Z. M. Yuan, S. B. Hu, C. L. Ong, and B. Liu

Appl. Phys. Lett. 96, 012506 (2010); http://dx.doi.org/10.1063/1.3276553 (3 pages) | Cited 6 times

Online Publication Date: 8 January 2010

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We report an electrically controlled magnetism in a real recording system with CoCrPt–TiO2 nanocomposite thin films as recording medium. We show that in a spin-stand test, with a small voltage of 3 V applied across the head-media gap during recording, a 13% reduction of saturation current was observed and the read back waveforms showed sharper transitions. These account for the 3 dB improvement in read back signal-noise-ratio of the written magnetic information. The improved recording performance is mainly attributed to the reduction of anisotropy of the recording medium in the presence of electrical field. Simulations were carried out to understand the magnetization reversal process under applied electric and magnetic fields.
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75.85.+t Magnetoelectric effects, multiferroics
75.50.Tt Fine-particle systems; nanocrystalline materials
75.50.Ss Magnetic recording materials
75.30.Gw Magnetic anisotropy
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.60.Jk Magnetization reversal mechanisms

Microstructure and superconductivity of Ir-doped BaFe2As2 superconductor

X. L. Wang, H. Y. Shi, X. W. Yan, Y. C. Yuan, Z.-Y. Lu, X. Q. Wang, and T.-S. Zhao

Appl. Phys. Lett. 96, 012507 (2010); http://dx.doi.org/10.1063/1.3290983 (3 pages) | Cited 6 times

Online Publication Date: 8 January 2010

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Polycrystalline samples with nominal composition of Ba(Fe1−xIrx)2As2 (x = 0.10, 0.15, and 0.20) were investigated by means of x-ray diffraction (XRD), scanning electron microscopy (SEM), electrical resistivity, and magnetization measurements. XRD and SEM results showed that almost single phase samples were obtained. Bulk superconductivity with TC ∼ 28 K was observed in the x = 0.10 sample. TC ∼ 28 K is the highest superconducting critical temperature among the reported data for electron-doped AFe2As2-type (A = Ca, Sr, and Ba) superconductors. The upper critical field Hc2(0) reaches as high as 65 T for the x = 0.10 sample. The underlying physics is discussed in connection with Co-doping case.
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74.25.fc Electric and thermal conductivity
74.70.Xa Pnictides and chalcogenides
74.25.Op Mixed states, critical fields, and surface sheaths
74.10.+v Occurrence, potential candidates
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
74.25.Ha Magnetic properties including vortex structures and related phenomena

Ferromagnetic ordering of silicon vacancies in N-doped silicon carbide

Mingwen Zhao, Fengchun Pan, and Liangmo Mei

Appl. Phys. Lett. 96, 012508 (2010); http://dx.doi.org/10.1063/1.3291562 (3 pages) | Cited 9 times

Online Publication Date: 8 January 2010

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We perform first-principles calculations to investigate the roles of silicon vacancy (VSi) and nitrogen impurity in the magnetic properties of silicon carbide (3C-SiC). High-spin configurations are predicted for the negatively-charged (VSi) defects. The coupling is ferromagnetic between the (VSi) defects at −2e charge state, whereas the (VSi) defects at -e charge state prefer to interact antiferromagnetically. Substituting C with N atoms can manipulate the charge states of (VSi) defects and the magnetic interactions between them. Our work offers a possible route toward high Curie temperature (Tc) ferromagnetism in metal-free 3C-SiC materials.
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75.30.Et Exchange and superexchange interactions
61.72.jd Vacancies
61.72.S- Impurities in crystals
75.50.Pp Magnetic semiconductors
75.50.Ee Antiferromagnetics
75.50.Dd Nonmetallic ferromagnetic materials
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