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4 Jan 2010

Volume 96, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 96, 013107 (2010); http://dx.doi.org/10.1063/1.3280900 (3 pages)

L. Fernández, M. Corso, F. Schiller, M. Ilyn, M. Holder, and J. E. Ortega
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Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

M. Syperek, P. Leszczyński, J. Misiewicz, E. M. Pavelescu, C. Gilfert, and J. P. Reithmaier

Appl. Phys. Lett. 96, 011901 (2010); http://dx.doi.org/10.1063/1.3280384 (3 pages) | Cited 2 times

Online Publication Date: 4 January 2010

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Low temperature carrier dynamics in the InGaAs/GaAs quantum dot-based tunnel injection structure is studied by the time resolved photoluminescence experiment. We observed strongly modified photoluminescence kinetics between tunnel injection and reference quantum dot structures. Slowing down of the photoluminescence rise time in the tunnel injection system under weak and moderate excitation powers, we attributed to a fingerprint of a feeding process of quantum dot states with nonresonant carriers tunneling from the quantum well reservoir. We propose a simple three-level rate equation model to explain qualitatively the observed photoluminescence temporal behavior. Its result shows a good agreement with our experimental data.
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78.67.Hc Quantum dots
73.63.Kv Quantum dots
73.63.Hs Quantum wells
78.67.De Quantum wells
78.47.jd Time resolved luminescence
78.55.Cr III-V semiconductors

Influence of density on NH bond stretch vibration in plasma enhanced chemical vapor deposited SiNx:H

H. F. W. Dekkers, Nagendra Babu Srinivasan, and G. Pourtois

Appl. Phys. Lett. 96, 011902 (2010); http://dx.doi.org/10.1063/1.3281249 (3 pages) | Cited 2 times

Online Publication Date: 4 January 2010

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The infrared absorption of hydrogenated silicon nitride (SiNx:H) films provides information about the average configuration of covalent bonds in the film. In plasma enhanced chemical vapor deposited SiNx:H, the absorption spectrum of the NH bonds shows both a systematic shift and a tailing toward lower frequency with the increase in the film density. First-principles computations of NH vibrations show an increased degree of anharmonicity when the H site is weakly interacting with a second neighboring N atom. This interaction becomes more pronounced in films with higher density, which consequently shifts the vibrational spectrum down.
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78.30.Hv Other nonmetallic inorganics
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Nk Insulators
68.55.aj Insulators

Effect of thermal annealing on the blueshift of energy gap and nitrogen rearrangement in GaAsSbN

Yan-Ting Lin, Ta-Chun Ma, Hao-Hsiung Lin, Jiun-De Wu, and Ying-Sheng Huang

Appl. Phys. Lett. 96, 011903 (2010); http://dx.doi.org/10.1063/1.3282797 (3 pages) | Cited 5 times

Online Publication Date: 5 January 2010

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We report on the blueshift of energy gap and the nitrogen rearrangement resulting from the thermal treatment of GaAsSbN samples. The composition ranges of N and Sb are from 2% to 3% and from 7% to 11%, respectively. By comparing the photoluminescence peak energy and absorption energy gap, we found that the thermal annealing leads to compositional homogenization. When the annealing temperature is higher than 750 °C, the local vibration mode (LVM) absorbance of isolated substitutional nitrogen NAs starts to increase with the temperature. This finding supports the argument that nitrogen pairs thermally dissociate to isolated nitrogen. In additions, the increase of LVM absorbance accompanies the blueshift of energy gap, suggesting that the blueshift is the consequence of the nitrogen rearrangement. The decomposition of nitrogen pairs has also been observed by photoreflectance spectroscopy (PR). Multiple peaks were resolved from the PR spectra of as-grown GaAsSbN. They are relevant to transitions from regions with different nitrogen pairings and isolated nitrogen. As the annealing temperature increases, the peaks gradually merge to that of isolated nitrogen, indicating the decomposition of nitrogen pairings.
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81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
78.20.-e Optical properties of bulk materials and thin films
63.20.-e Phonons in crystal lattices
71.20.Nr Semiconductor compounds

Micro-Raman spectroscopy of Si nanowires: Influence of diameter and temperature

A. Torres, A. Martín-Martín, O. Martínez, A. C. Prieto, V. Hortelano, J. Jiménez, A. Rodríguez, J. Sangrador, and T. Rodríguez

Appl. Phys. Lett. 96, 011904 (2010); http://dx.doi.org/10.1063/1.3284647 (3 pages) | Cited 4 times

Online Publication Date: 5 January 2010

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Raman spectroscopy provides nondestructive information about nanoscaled semiconductors by modeling the phonon confinement effect. However, the Raman spectrum is also sensitive to the temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present an analysis of the Raman spectra of Si nanowires (NWs). The influence of the excitation conditions and the temperature increase in the NWs are discussed. The interpretation of the data is supported by the calculation of the temperature inside the NWs with different diameters.
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78.30.Am Elemental semiconductors and insulators
78.67.Lt Quantum wires
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Characteristic length scales governing plasticity/brittleness of bulk metallic glasses at ambient temperature

Y. Yang, J. C. Ye, J. Lu, P. K. Liaw, and C. T. Liu

Appl. Phys. Lett. 96, 011905 (2010); http://dx.doi.org/10.1063/1.3290246 (3 pages) | Cited 13 times

Online Publication Date: 6 January 2010

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In this letter, we propose a unified theory for the size-dependent plasticity of bulk metallic glasses (BMGs) at room temperature. Based on the principle of energy balance and the shear-banding kinetics, two characteristic length scales are derived. One is a sample-geometry dependent variable related to the elastic energy released to drive shear-band propagation and the other is a material-dependent constant related to the internal resistance to brittle fracture. It is shown that this unified theory is effective in explaining many unusual deformation and fracture behaviors of BMGs.
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81.40.Lm Deformation, plasticity, and creep
62.20.fq Plasticity and superplasticity
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.mm Fracture
62.20.D- Elasticity
61.43.Fs Glasses

Metamaterials on parylene thin film substrates: Design, fabrication, and characterization at terahertz frequency

X. Liu, S. MacNaughton, D. B. Shrekenhamer, H. Tao, S. Selvarasah, A. Totachawattana, R. D. Averitt, M. R. Dokmeci, S. Sonkusale, and W. J. Padilla

Appl. Phys. Lett. 96, 011906 (2010); http://dx.doi.org/10.1063/1.3275015 (3 pages) | Cited 8 times

Online Publication Date: 7 January 2010

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We design, fabricate, and characterize terahertz (THz) resonant metamaterials on parylene free-standing thin film substrates. Several different metamaterials are investigated and our results show strong electromagnetic responses at THz frequencies ranging from 500 GHz to 2.5 THz. The complex frequency dependent dielectric properties of parylene are determined from inversion of reflection and transmission data, thus indicating that parylene is an ideal low loss substrate or coating material. The biostable and biocompatible properties of parylene coupled with the multifunctional exotic properties of metamaterials indicate great potential for medical purposes such as THz imaging for skin cancer detection.
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42.70.Jk Polymers and organics
68.55.am Polymers and organics
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.55.-g Dielectric thin films
78.70.Gq Microwave and radio-frequency interactions

Effects of subconduction band excitations on thermal conductance at metal-metal interfaces

Patrick E. Hopkins, Thomas E. Beechem, John C. Duda, Justin L. Smoyer, and Pamela M. Norris

Appl. Phys. Lett. 96, 011907 (2010); http://dx.doi.org/10.1063/1.3276908 (3 pages) | Cited 2 times

Online Publication Date: 8 January 2010

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Increased power densities combined with the decreased length scales of nanosystems give rise to large thermal excitations that can drastically affect the electron population near the Fermi surface. In light of such conditions, a model is developed for electron thermal boundary conductance (eTBC) that accounts for significant changes in the electron and hole populations around the Fermi level that occur at heightened temperatures. By including the contribution of subconduction band electrons to transport and evaluating the transmission coefficient based upon the total number of available states, an extension of eTBC predictions to high temperatures is made possible.
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73.20.At Surface states, band structure, electron density of states
73.40.-c Electronic transport in interface structures
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
81.05.Bx Metals, semimetals, and alloys
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
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