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Appl. Phys. Lett. 96, 201905 (2010); doi:10.1063/1.3430524 (3 pages)

Dynamics of charge leakage from self-assembled CdTe quantum dots

Ł. Kłopotowski1, M. Goryca2, T. Kazimierczuk2, P. Kossacki2, P. Wojnar2, G. Karczewski2, and T. Wojtowicz2

1Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
2Institute of Experimental Physics, University of Warsaw, ul. Hoża 69, 00-681 Warsaw, Poland

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(Received 31 March 2010; accepted 27 April 2010; published online 19 May 2010)

We study the leakage dynamics of charge stored in an ensemble of CdTe quantum dots embedded in a field-effect structure. Optically excited electrons are stored and read out by a proper time sequence of bias pulses. We monitor the dynamics of electron loss and find that the rate of the leakage is strongly dependent on time, which we attribute to an optically generated electric field related to the stored charge. A rate equation model quantitatively reproduces the results.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 78.67.Hc

    Quantum dots

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 73.21.La

    Quantum dots

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

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