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Applied Physics Letters / Volume 96 / Issue 20 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 96, 201906 (2010); http://dx.doi.org/10.1063/1.3429084 (3 pages)

Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge

E. Napolitani1, G. Bisognin1, E. Bruno2, M. Mastromatteo1, G. G. Scapellato2, S. Boninelli2, D. De Salvador1, S. Mirabella2, C. Spinella3, A. Carnera1, and F. Priolo2

1MATIS-IMM-CNR and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
2MATIS-IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy
3IMM-CNR, VIII Strada 5, 95121 Catania, Italy

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(Received 19 March 2010; accepted 22 April 2010; published online 19 May 2010)

The dissolution of interstitial-type end-of-range (EOR) damage in preamorphized Ge is shown to induce a transient enhanced diffusion of an epitaxially grown boron delta at temperatures above 350 °C that saturates above 420 °C. The B diffusion events are quantitatively correlated with the measured positive strain associated with the EOR damage as a function of the annealing temperature with an energy barrier for the EOR damage dissolution of 2.1±0.3 eV. These results unambiguously demonstrate that B diffuses in Ge through a mechanism assisted by self-interstitials, and impose considering the interstitial implantation damage for the modeling of impurity diffusion in Ge.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, boron, diffusion, dissolving, elemental semiconductors, germanium, impurities, interstitials, ion implantation, semiconductor epitaxial layers

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3429084

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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