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17 May 2010

Volume 96, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 96, 203102 (2010); http://dx.doi.org/10.1063/1.3429125 (3 pages)

Qimin Quan, Parag B. Deotare, and Marko Loncar
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Roles of lattice distortion in (1−x)(Bi0.5Na0.5)TiO3-xBaTiO3 ceramics

Y. S. Sung, J. M. Kim, J. H. Cho, T. K. Song, M. H. Kim, and T. G. Park

Appl. Phys. Lett. 96, 202901 (2010); http://dx.doi.org/10.1063/1.3428580 (3 pages) | Cited 12 times

Online Publication Date: 17 May 2010

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Structure property relations in (1−x)(Bi0.5Na0.5)TiO3-xBaTiO3 ceramics were investigated at x = 0–10 mol %. A solid solution with either rhombohedral or tetragonal symmetry was confirmed with a morphotropic phase boundary (MPB) at x = 5–7 mol %. Grains became small with increasing x possibly due to grain boundary pinning by BaBi′–BaNa•. Lattice distortion was a key factor affecting piezoelectric coefficient (d33) and depolarization temperature (Td). Both rhombohedral 90−α and tetragonal cT/aT lattice distortion became smaller toward the MPB causing poling by field and depoling by temperature to become easier subsequently resulting in higher d33 but lower Td, and vice versa.
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61.72.Mm Grain and twin boundaries
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling

Reversible plasma switching in epitaxial BiFeO3 thin films

Yunseok Kim, Ionela Vrejoiu, Dietrich Hesse, and Marin Alexe

Appl. Phys. Lett. 96, 202902 (2010); http://dx.doi.org/10.1063/1.3431585 (3 pages) | Cited 6 times

Online Publication Date: 17 May 2010

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Reversible plasma switching in epitaxial multiferroic BiFeO3 thin films was directly observed and analyzed using piezoresponse force microscopy. The polarization could be reversibly switched using oxygen plasma and a subsequent thermal annealing treatment in vacuum, respectively. The domain wall velocity during plasma switching, estimated to about 10−8 m/s, is much slower compared to the normal electrical switching, however a large area of square centimeter scale could be stably switched. The results demonstrate that reversible plasma switching can be achieved by oxygen plasma treatment and it can be a useful tool for an electrode-less control of ferroelectric switching on large area.
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77.80.Fm Switching phenomena
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
52.77.-j Plasma applications
81.40.Gh Other heat and thermomechanical treatments

Electrode material dependent breakdown and recovery in advanced high-κ gate stacks

X. Wu, K. L. Pey, G. Zhang, P. Bai, X. Li, W. H. Liu, and N. Raghavan

Appl. Phys. Lett. 96, 202903 (2010); http://dx.doi.org/10.1063/1.3429682 (3 pages) | Cited 7 times

Online Publication Date: 19 May 2010

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In this paper, the mechanism and physics governing the breakdown and recovery in metal-gated high-κ (MG-HK) dielectric stacks is investigated. Postbreakdown recovery is observed in NiSi and TiN-gated, but not TaN-gated, HfO2-based logic devices in voltage-stress tests. Failure analysis studies reveal that metal-filamentation, besides oxygen vacancies, is responsible for the breakdown of these MG-HK dielectrics. First-principle studies show that the 5d orbitals of Hf and migrated metal atoms in the filamentation process reduce the band gap and increase the leakage current, eventually causing percolative breakdown of the dielectric. Postbreakdown recovery is feasible only for gate stacks with a low enough defect formation energy, which can be realized by selecting appropriate gate electrode materials, such as NiSi and TiN.
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85.30.Tv Field effect devices
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Temperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO3 thin films

Zheng Wen, Xuan Shen, Jingxian Wu, Di Wu, Aidong Li, Bin Yang, Zhu Wang, Hengzhi Chen, and Junling Wang

Appl. Phys. Lett. 96, 202904 (2010); http://dx.doi.org/10.1063/1.3432083 (3 pages) | Cited 11 times

Online Publication Date: 20 May 2010

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Leakage current characteristics of (Bi0.86Pr0.14)(Fe0.95Mn0.05)O3 (BPFMO) thin films are studied at various temperatures from 293 down to 93 K. Space charge limited current and Poole–Frenkel (PF) emission are found to be the dominant mechanism in the low and the high electric fields, respectively. The trap ionization energy at zero-field in BPFMO films is deduced to be around 0.29 eV, which indicates the existence of shallow traps. A negative differential resistivity behavior is observed before the onset of PF emission at 93 K, which is discussed in terms of the competition between electron trapping and field-assisted thermal emission.
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77.55.-g Dielectric thin films
73.50.Fq High-field and nonlinear effects
72.20.Ht High-field and nonlinear effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
79.70.+q Field emission, ionization, evaporation, and desorption

An in situ examination of atomic layer deposited alumina/InAs(100) interfaces

A. P. Kirk, M. Milojevic, J. Kim, and R. M. Wallace

Appl. Phys. Lett. 96, 202905 (2010); http://dx.doi.org/10.1063/1.3432749 (3 pages) | Cited 13 times

Online Publication Date: 21 May 2010

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Undoped InAs(100) wafers were either passivated with sulfur from a (NH4)2Sx solution or etched with NH4OH and then characterized with monochromatic x-ray photoelectron spectroscopy (XPS) before and after in situ deposition of Al2O3 by atomic layer deposition. Sulfur passivation minimized oxidation. Trimethyl aluminum (TMA) exposure reduced trivalent indium and arsenic oxidation states. The In1+ chemical state persisted while elemental arsenic remained at the Al2O3/InAs interface prior to TMA exposure and possibly a mixture of As–As and As–Al bonds were present afterwards. The In 3d5/2 peak line shape from bulk InAs differed from previous XPS experiments on epitaxial InxGa1−xAs.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Cf Surface cleaning, etching, patterning
81.65.Mq Oxidation
81.65.Rv Passivation
79.60.Jv Interfaces; heterostructures; nanostructures
68.55.aj Insulators
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