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17 May 2010

Volume 96, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 96, 203102 (2010); http://dx.doi.org/10.1063/1.3429125 (3 pages)

Qimin Quan, Parag B. Deotare, and Marko Loncar
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Optical transmission of periodic annular apertures in metal film on high-refractive index substrate: The role of the nanopillar shape

J.-S. Bouillard, J. Einsle, W. Dickson, S. G. Rodrigo, S. Carretero-Palacios, L. Martin-Moreno, F. J. Garcia-Vidal, and A. V. Zayats

Appl. Phys. Lett. 96, 201101 (2010); http://dx.doi.org/10.1063/1.3427390 (3 pages) | Cited 2 times

Online Publication Date: 17 May 2010

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The influence of annular aperture parameters on the optical transmission through arrays of coaxial apertures in a metal film on high refractive index substrates has been investigated experimentally and numerically. It is shown that the transmission resonances are related to plasmonic crystal effects rather than frequency cutoff behavior associated with annular apertures. The role of deviations from ideal aperture shape occurring during the fabrication process has also been studied. Annular aperture arrays are often considered in many applications for achieving high optical transmission through metal films and understanding of nanofabrication tolerances are important.
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78.66.Bz Metals and metallic alloys
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.07.Bc Nanocrystalline materials
75.75.-c Magnetic properties of nanostructures

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow

Appl. Phys. Lett. 96, 201102 (2010); http://dx.doi.org/10.1063/1.3430039 (3 pages) | Cited 20 times

Online Publication Date: 17 May 2010

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n-ZnO/p-GaN heterojunction light-emitting diodes with and without a sandwiched AlN layer were fabricated. The electroluminescence (EL) spectrum acquired from the n-ZnO/p-GaN displays broad emission at 650 nm originating from ZnO and weak emission at 440 nm from GaN, whereas the n-ZnO/AlN/p-GaN exhibits strong violet emission at 405 nm from ZnO without GaN emission. The EL intensity is greatly enhanced by inserting a thin AlN intermediate layer and it can be attributed to the suppressed formation of the GaOx interfacial layer and confinement effect rendered by the AlN potential barrier layer.
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85.60.Jb Light-emitting devices
78.66.Hf II-VI semiconductors
78.66.Fd III-V semiconductors
78.60.Fi Electroluminescence
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

On-demand entanglement source with polarization-dependent frequency shift

Xiang-Bin Wang, Cheng-Xi Yang, and Yan-Bing Liu

Appl. Phys. Lett. 96, 201103 (2010); http://dx.doi.org/10.1063/1.3427485 (3 pages) | Cited 2 times

Online Publication Date: 17 May 2010

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The polarization entanglement photon pairs generated from the biexciton cascade decay in a single semiconductor quantum dot is distorted due to the fine structure splitting. We show that, frequency of light can be shifted when it passes through an electro-optic modulator under voltage ramping. Based on this, we can realize polarization-dependent frequency shift and the hidden entanglement due to fine structure splitting can be revealed.
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73.21.La Quantum dots
78.20.Jq Electro-optical effects
71.35.-y Excitons and related phenomena
03.67.Mn Entanglement measures, witnesses, and other characterizations
03.67.Bg Entanglement production and manipulation

Terahertz surface plasmon propagation in nanoporous silicon layers

Shu-Zee A. Lo and Thomas E. Murphy

Appl. Phys. Lett. 96, 201104 (2010); http://dx.doi.org/10.1063/1.3432071 (3 pages) | Cited 1 time

Online Publication Date: 18 May 2010

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We describe the fabrication and measurement of a terahertz surface plasmon waveguide in which the optical mode is localized within a nanoporous silicon slab. We compare the propagation characteristics among waveguides with different porous layer thickness, and present an analytical model that accurately describes the dispersion and loss in the waveguides.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
63.20.Pw Localized modes
61.43.Gt Powders, porous materials

Terahertz optical sideband emission in self-assembled quantum dots

I. C. Sandall, N. E. Porter, M. Wagner, H. Schneider, S. Winnerl, M. Helm, and L. Wilson

Appl. Phys. Lett. 96, 201105 (2010); http://dx.doi.org/10.1063/1.3429681 (3 pages) | Cited 1 time

Online Publication Date: 18 May 2010

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A multilayer quantum dot sample has been excited with a strong terahertz (THz) electric field and probed with a near-infrared (NIR) laser. First- and second-order THz optical sidebands are generated on the NIR probe beam by driving quantum dot intersublevel resonances with the THz fields. A conversion efficiency of 3×10−6 was obtained for the conversion of NIR power into sideband emission at 4 K, decreasing by a factor of 20 up to room temperature. The sideband emission wavelength can be tuned over ∼ 20 nm by selection of appropriate NIR and THz frequencies, due to the inhomogeneous broadening of the dot ensemble.
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78.70.Gq Microwave and radio-frequency interactions
68.65.Ac Multilayers
81.16.Dn Self-assembly
81.07.Ta Quantum dots
78.67.Hc Quantum dots

InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates

Dongmei Deng, Naisen Yu, Yong Wang, Xinbo Zou, Hao-Chung Kuo, Peng Chen, and Kei May Lau

Appl. Phys. Lett. 96, 201106 (2010); http://dx.doi.org/10.1063/1.3427438 (3 pages) | Cited 2 times

Online Publication Date: 18 May 2010

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InGaN-based light-emitting diodes (LEDs) were grown and fabricated on nanoscale patterned Si (111) substrates (NPSi). Using anodized aluminum oxide as the etch mask, the NPSi was prepared with an average nanopore diameter of 150 nm and interpore distance of 120 nm. LEDs grown on NPSi exhibit relaxed tensile stress relative to the ones grown on microscale patterned Si (111) substrates (MPSi). Nanoheteroepitaxial lateral overgrowth was significantly promoted on NPSi, which led to extensive dislocation bending and annihilation. The devices made on NPSi exhibit lower leakage current and higher light output power as compared with those on MPSi.
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85.60.Jb Light-emitting devices
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.65.Cf Surface cleaning, etching, patterning
81.16.-c Methods of micro- and nanofabrication and processing

Dual rf-optical slot waveguide for ultrabroadband modulation with a subvolt Vπ

Shouyuan Shi and Dennis W. Prather

Appl. Phys. Lett. 96, 201107 (2010); http://dx.doi.org/10.1063/1.3430510 (3 pages) | Cited 2 times

Online Publication Date: 18 May 2010

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In this letter, we propose a high speed and ultralow driving voltage traveling wave electro-optic (EO) modulator based on a dual horizontal slot waveguide. The proposed design harnesses the unique properties of ferroelectric materials such as LiNBO3 and exotic, organic EO polymers to tightly confine both the optical and rf modes in a nanoscale slot maximizing the nonlinear interaction with the electric field. Larger electrode separation allows for significant reduction in rf propagation loss. Simulations of the half-wavelength voltage-length product and electro-optic response of the proposed device reveal ultrabroadband operation, up to 250 GHz, and subvolt driving voltage for a 1 cm long modulator.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.70.Jk Polymers and organics

Ultrafast all-optical magnetic switching in NaTb(WO4)2

Zuanming Jin, Hong Ma, Lihua Wang, Guohong Ma, Feiyun Guo, and Jianzhong Chen

Appl. Phys. Lett. 96, 201108 (2010); http://dx.doi.org/10.1063/1.3432072 (3 pages) | Cited 4 times

Online Publication Date: 21 May 2010

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The operation of an all-optical magnetic switching based on the paramagnetic NaTb(WO4)2 crystals is carried out by the time-resolved magneto-optical Faraday effect. Our results demonstrate that the switching time can be as fast as ∼ 500 fs at room temperature. The switching amplitude shows a linear dependence on the excitation intensity, which is proportional to the magnetization induced by the circularly polarized light. Based on the inverse Faraday effect in magneto-optical crystal, the switching mechanisms arising from circular dichroism and birefringence are discussed. By tailoring the magneto-optical properties of NaTb(WO4)2 crystal, the switching magnitude can be modulated.
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42.25.Lc Birefringence
85.70.-w Magnetic devices
33.57.+c Magneto-optical and electro-optical spectra and effects
42.25.Ja Polarization
33.55.+b Optical activity and dichroism
42.81.Gs Birefringence, polarization

Conduction and transmission analysis in gold nanolayers embedded in zinc oxide for flexible electronics

K. Sivaramakrishnan and T. L. Alford

Appl. Phys. Lett. 96, 201109 (2010); http://dx.doi.org/10.1063/1.3435467 (3 pages) | Cited 7 times

Online Publication Date: 21 May 2010

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Gold-embedded zinc oxide structures are obtained in which the conduction mechanism changes from conduction through the oxide and activated tunneling between discontinuous metal islands to metallic conduction through a near-continuous layer, with increase in gold thickness. These structures can show resistivity as low as 5.2×10−5 Ω cm. Optical transmission is elucidated in terms of gold’s absorption due to interband electronic transitions, and free carrier absorption losses combined with limitation of the mean free path in discontinuous nanoparticles. The structures show transmittance, photopic averaged transmittance, and Haacke figure of merit values of 93%, 84%, and 15.1×10−3 Ω−1, respectively.
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72.80.Ey III-V and II-VI semiconductors
73.61.Ga II-VI semiconductors
68.55.-a Thin film structure and morphology
78.66.Hf II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
77.55.-g Dielectric thin films

Temperature performance analysis of terahertz quantum cascade lasers: Vertical versus diagonal designs

Alpár Mátyás, Mikhail A. Belkin, Paolo Lugli, and Christian Jirauschek

Appl. Phys. Lett. 96, 201110 (2010); http://dx.doi.org/10.1063/1.3430741 (3 pages) | Cited 8 times

Online Publication Date: 21 May 2010

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Resonant phonon depopulation terahertz quantum cascade lasers based on vertical and diagonal lasing transitions are systematically compared using a well established ensemble Monte Carlo approach. The analysis shows that for operating temperatures below 200 K, diagonal designs may offer superior temperature performance at lasing frequencies of about 3.5 THz and above; however, vertical structures are more advantageous for good temperature performance at lower frequencies.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage

Songzhan Li, Guojia Fang, Hao Long, Xiaoming Mo, Huihui Huang, Binzhong Dong, and Xingzhong Zhao

Appl. Phys. Lett. 96, 201111 (2010); http://dx.doi.org/10.1063/1.3431287 (3 pages) | Cited 8 times

Online Publication Date: 21 May 2010

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Ultraviolet light-emitting diodes based on simple n-ZnO/n-GaN isotype heterojunction have been fabricated using a radio frequency magnetron sputtering system. Ultraviolet emission peaking around ∼ 368 nm with a full-width at half maximum of ∼ 7 nm was observed at room temperature when the devices were under sufficient forward bias. With the presence of an i-MgO layer inserted between the ZnO and GaN layers, the ultraviolet emission intensity and output power have been much enhanced, while the threshold voltage drops down to 2.5 V. The electroluminescence mechanisms in these devices were discussed in terms of the band diagrams of the heterojunctions.
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85.60.Jb Light-emitting devices

Plasmonic mid-infrared beam steering

D. C. Adams, S. Thongrattanasiri, T. Ribaudo, V. A. Podolskiy, and D. Wasserman

Appl. Phys. Lett. 96, 201112 (2010); http://dx.doi.org/10.1063/1.3431665 (3 pages) | Cited 7 times

Online Publication Date: 21 May 2010

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We present a metal/semiconductor beam steering device for use in the mid-infrared wavelength range. We demonstrate how changing the frequency of the incident light results in a smoothly varying shift in the angular distribution of the transmitted beam, and we present an analysis of the beam profile for a number of different wavelengths. Finally we verify that a similar steering effect is achieved with fixed frequency incident light and a modification of the permittivity of the semiconductor substrate, ultimately resulting in a 3° shift in the transmitted beam angle for minimal shifts in the semiconductor permittivity.
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42.60.-v Laser optical systems: design and operation
77.22.Ch Permittivity (dielectric function)
78.66.Bz Metals and metallic alloys
78.30.-j Infrared and Raman spectra
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