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17 May 2010

Volume 96, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 96, 203102 (2010); http://dx.doi.org/10.1063/1.3429125 (3 pages)

Qimin Quan, Parag B. Deotare, and Marko Loncar
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Metal grid/conducting polymer hybrid transparent electrode for inverted polymer solar cells

Jingyu Zou, Hin-Lap Yip, Steven K. Hau, and Alex K.-Y. Jen

Appl. Phys. Lett. 96, 203301 (2010); http://dx.doi.org/10.1063/1.3394679 (3 pages) | Cited 40 times

Online Publication Date: 17 May 2010

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A simple method was developed using metal grid/conducting polymer hybrid transparent electrode to replace indium tin oxide (ITO) for the fabrication of inverted structure polymer solar cells. The performance of the devices could be tuned easily by varying the width and separation of the metal grids. By combining the appropriate metal grid geometry with a thin conductive polymer layer, substrates with comparable transparency and sheet resistance to those of ITO could be achieved. Polymer solar cells fabricated using this hybrid electrode show efficiencies as high as ∼ 3.2%. This method provides a feasible way for fabricating low-cost, large-area organic solar cells.
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88.40.H- Solar cells (photovoltaics)
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Anisotropy of electrical conductivity in a pentacene crystal grain on SiO2 evaluated by atomic-force-microscope potentiometry and electrostatic simulation

Noboru Ohashi (大橋昇), Hiroshi Tomii (冨井弘), Masatoshi Sakai (酒井正俊), Kazuhiro Kudo (工藤一浩), and Masakazu Nakamura (中村雅一)

Appl. Phys. Lett. 96, 203302 (2010); http://dx.doi.org/10.1063/1.3430041 (3 pages)

Online Publication Date: 18 May 2010

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Conductivity anisotropy in a crystal grain of thin-film-phase pentacene has been estimated by a combination of atomic-force-microscope potentiometry (AFMP) and electrostatic simulation. The surface potential distribution and topography of a grain in a working pentacene thin-film transistor are simultaneously measured by AFMP. Then, the nonlinear potential profile due to the thickness variation is simulated by changing the anisotropic ratio of conductivity. The anisotropic ratio (corresponding to the anisotropy of carrier drift mobility) is estimated to be σx:σz = 45:1, where x is the horizontal (harmonic mean of those in a- and b-axes) direction and z is the vertical (c-axis) direction.
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72.80.Sk Insulators
73.61.Ng Insulators
73.50.Dn Low-field transport and mobility; piezoresistance
72.20.Fr Low-field transport and mobility; piezoresistance
68.55.J- Morphology of films
68.47.Gh Oxide surfaces
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Control of magnetoconductance through modifying the amount of dissociated excited states in tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes

P. Chen, Y. L. Lei, Q. L. Song, Q. M. Zhang, Y. Zhang, R. Liu, and Z. H. Xiong

Appl. Phys. Lett. 96, 203303 (2010); http://dx.doi.org/10.1063/1.3430044 (3 pages) | Cited 1 time

Online Publication Date: 19 May 2010

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Magnetoconductance (MC) is generally believed to be controlled by the ratio of singlet to triplet excited states. In this study, it is found that the MC magnitude of tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes decreases substantially upon the introduction of narrow band gap fluorescent dopants. Since singlet to triplet ratio of excited states keeps unchanged in doped devices, this large reduction in MC means that other underlying mechanism affects the MC. The charge carrier trapping effect is proposed here to vary the magnitude of MC. By using this trapping effect, the controlling of the total amount of dissociated electron-hole pairs and consequently the magnitude of MC are realized by changing the dopant’s concentration or band gaps.
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85.60.Jb Light-emitting devices
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Organic floating-gate transistor memory based on the structure of pentacene/nanoparticle-Al/Al2O3

Wei Wang and Dongge Ma

Appl. Phys. Lett. 96, 203304 (2010); http://dx.doi.org/10.1063/1.3432667 (3 pages) | Cited 7 times

Online Publication Date: 20 May 2010

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An organic thin-film transistor memory, based on the pentacene semiconductor/nanoparticle-Al floating-gate/Al2O3 tunneling layer, is demonstrated by a simple fabrication process. The floating-gate transistor exhibits significant hysteresis behaviors in current–voltage characteristics and these hysteresis loops size depends on the gate voltage sweeping range. The memory windows of 32.5, 50, and 67.5 V and the memory ratio of 13, 32, and 70 can be obtained by the writing/erasing pulse of ±40 V, ±50 V, and ±60 V, respectively. The charge storage mechanism is discussed well via holes inject or eject the floated gate by F–N tunneling.
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84.30.Sk Pulse and digital circuits
81.05.Fb Organic semiconductors
85.30.Tv Field effect devices
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Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy

Lucile C. Teague, Oana D. Jurchescu, Curt A. Richter, Sankar Subramanian, John E. Anthony, Thomas N. Jackson, David J. Gundlach, and James G. Kushmerick

Appl. Phys. Lett. 96, 203305 (2010); http://dx.doi.org/10.1063/1.3389493 (3 pages) | Cited 2 times

Online Publication Date: 21 May 2010

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We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.
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85.30.Tv Field effect devices
73.61.Ph Polymers; organic compounds
72.20.Fr Low-field transport and mobility; piezoresistance
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A combined theoretical and experimental investigation on the transient photovoltage in organic photovoltaic cells

Yao Yao, Xiaoyu Sun, Baofu Ding, De-Li Li, Xiaoyuan Hou, and Chang-Qin Wu

Appl. Phys. Lett. 96, 203306 (2010); http://dx.doi.org/10.1063/1.3431289 (3 pages) | Cited 6 times

Online Publication Date: 21 May 2010

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We present a time-dependent device model, describing the dynamical processes of both exciton induced by light illumination and charge carriers created from the exciton dissociation, to calculate the transient photovoltage (TPV) in single-layer organic photovoltaic cells. With reasonable parameters for the specific ITO (indium tin oxide)/CuPc (copper phthalocyanine)/Al (aluminum) structure, we could obtain the TPV well fitted with previous experimental observation by adjusting only the intensity of input laser pulse. Further, we saw a saturation of this TPV by changing the intensity of laser pulse from the calculation, which has been confirmed by the experimental measurement on ITO/NPB [N,N-bis(l-naphthyl)-N,N-diphenyl-1,l-biphentl-4,4-diamine]/Al structure. The saturated TPV value is found to be sensitive to the mobility of minority carriers, which might be useful in the estimation of mobilities.
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84.60.Jt Photoelectric conversion
71.35.-y Excitons and related phenomena
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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