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Applied Physics Letters / Volume 96 / Issue 21 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 213508 (2010); http://dx.doi.org/10.1063/1.3435481 (3 pages)

Photocurrent increase in n-i-p thin film silicon solar cells by guided mode excitation via grating coupler

Karin Söderström, Franz-Josef Haug, Jordi Escarré, Oscar Cubero, and Christophe Ballif

Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne (EPFL), 2000 Neuchâtel, Switzerland

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(Received 24 March 2010; accepted 29 April 2010; published online 26 May 2010)

Angle resolved measurements of the external quantum efficiency of n-i-p single junction amorphous solar cell deposited on a grating structure show clearly defined peaks of enhanced photocurrent in the weakly absorbing region between 1.6 and 2.15 eV. We explain these absorption phenomena and their angular variation with the excitation of guided modes via grating coupling. Calculation using an equivalent flat multilayer system permits to relate the theoretical values with the experimental data.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

amorphous semiconductors, diffraction gratings, elemental semiconductors, photoconductivity, semiconductor junctions, semiconductor thin films, silicon, solar cells, thin film devices

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3435481

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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