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24 May 2010

Volume 96, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 96, 213701 (2010); http://dx.doi.org/10.1063/1.3431628 (3 pages)

Satish Rao, Saurabh Raj, Stefan Balint, Carlota Bardina Fons, Susana Campoy, Montserrat Llagostera, and Dmitri Petrov
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Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks

C. Marchiori, E. Kiewra, J. Fompeyrine, C. Gerl, C. Rossel, M. Richter, J.-P. Locquet, T. Smets, M. Sousa, C. Andersson, and D. J. Webb

Appl. Phys. Lett. 96, 212901 (2010); http://dx.doi.org/10.1063/1.3430572 (3 pages) | Cited 3 times

Online Publication Date: 24 May 2010

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Metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with amorphous Al2O3 and HfO2/SiOx–Si gate stacks, grown by molecular beam deposition. As and In oxides were observed at the Al2O3/In0.17Ga0.83As interface, whereas no oxides were detected on the Si-passivated In0.17Ga0.83As surface after HfO2 deposition. Traces of As were found in both gate stacks. Si-passivated MOSFETs, with a drain current of 2.8×103 μA/mm at Vg−Vt = 2.0 V, Vd = 1.0 V, Ion/Ioff = 1×107, and inverse subthreshold slope of 98–120 mV/decade, show superior performance with respect to devices without Si interlayer.
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85.30.Tv Field effect devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors
73.61.Jc Amorphous semiconductors; glasses

Polarization reversal behavior in the Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt capacitors for different reversal directions

Hyun Ju Lee, Gun Hwan Kim, Min Hyuk Park, An-Quan Jiang, and Cheol Seong Hwang

Appl. Phys. Lett. 96, 212902 (2010); http://dx.doi.org/10.1063/1.3435484 (3 pages) | Cited 5 times

Online Publication Date: 25 May 2010

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The polarization reversal behavior of Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt capacitors was examined according to the reversal direction using transient switching current measurements. The changes in switching resistance according to the polarization reversal direction suggests that during reversal from the upward to downward polarization, nucleation of a reversed domain occurs at the top interface, whereas nucleation occurs at the bottom interface in the opposite case. The extremely high activation energy for the nucleation of a reversed domain can be reduced considerably by electron injection from the by-electrode but not by hole injection.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Capacitance-voltage characteristics of SrTiO3/LaVO3 epitaxial heterostructures

Woong Choi, Sang Yoon Lee, and Timothy D. Sands

Appl. Phys. Lett. 96, 212903 (2010); http://dx.doi.org/10.1063/1.3441400 (3 pages) | Cited 3 times

Online Publication Date: 27 May 2010

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We report a quantitative analysis on the capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor capacitors based on SrTiO3/LaVO3 epitaxial heterostructures grown by pulsed laser deposition. The C-V measurement of the heterostructure exhibited a decrease in capacitance by ∼ 20% at positive voltages with an estimated carrier concentration of 8×1018 cm−3. The C-V curve by a simulation was in good agreement with the measurement, confirming the formation of a depletion layer and the estimated carrier concentration. These results suggest that quantitative understanding on the electrical behavior of oxide heterostructures is possible with C-V measurements, with potentially important implications on their device applications.
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84.32.Tt Capacitors
81.15.Fg Pulsed laser ablation deposition

Tunable thin film bulk acoustic wave resonators with improved Q-factor

A. Vorobiev and S. Gevorgian

Appl. Phys. Lett. 96, 212904 (2010); http://dx.doi.org/10.1063/1.3441413 (3 pages) | Cited 6 times

Online Publication Date: 28 May 2010

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The tunable solidly mounted Ba0.25Sr0.75TiO3 (BSTO) thin film bulk acoustic wave resonators (TFBARs) with improved Q-factor are fabricated and characterized. The BSTO films are grown by magnetron sputtering at temperature 600 °C and extremely low sputter gas pressure 2 mTorr using on-axis configuration. The measured TFBARs Q-factor is more than 250 and mechanical Q-factor is more than 350 at 5 GHz resonance frequency. The improvement in the Q-factor is associated with reduction in the BSTO film grain misorientation. The latter is responsible for generation of shear waves leaking through the Bragg reflector and corresponding acoustic loss.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
81.15.Cd Deposition by sputtering
84.40.-x Radiowave and microwave (including millimeter wave) technology
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