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24 May 2010

Volume 96, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 96, 213701 (2010); http://dx.doi.org/10.1063/1.3431628 (3 pages)

Satish Rao, Saurabh Raj, Stefan Balint, Carlota Bardina Fons, Susana Campoy, Montserrat Llagostera, and Dmitri Petrov
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White luminescence from single-layer devices of nonresonant polymer blends

Sergio Brovelli, Hao Guan, Gustaf Winroth, Oliver Fenwick, Francesco Di Stasio, Rusli Daik, W. James Feast, Francesco Meinardi, and Franco Cacialli

Appl. Phys. Lett. 96, 213301 (2010); http://dx.doi.org/10.1063/1.3387816 (3 pages) | Cited 3 times

Online Publication Date: 24 May 2010

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Poly(9,9′-dioctyl fluorene) (F8) and poly(4,4′-diphenylene diphenylvinylene) (PDPV) are conjugated polymers with optical transitions that are nonresonant thanks to the particular structural features of PDPV that yield a very large Stokes’ shift ( ∼ 1.14 eV) between absorption and emission spectra. We present steady-state and time-resolved photoluminescence (PL) experiments showing that F8:PDPV blends are “optically disconnected” systems for which the emission spectra and PL quantum yields are the linear combination of the contributions of the individual constituents with weights given by the respective absorption coefficients and concentration in the films. Single-layer light-emitting diodes incorporating F8:PDPV blends show white electroluminescence resulting from the simultaneous exploitation of the spectral features of both blend constituents (Commission Internationale de l’Eclairage, CIE, coordinates: x = 0.27 and y = 0.36, in the case of 8:2 F8:PDPV molar ratio).
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85.60.Jb Light-emitting devices
85.60.Bt Optoelectronic device characterization, design, and modeling
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A metallic molybdenum suboxide buffer layer for organic electronic devices

M. T. Greiner, M. G. Helander, Z. B. Wang, W. M. Tang, J. Qiu, and Z. H. Lu

Appl. Phys. Lett. 96, 213302 (2010); http://dx.doi.org/10.1063/1.3432447 (3 pages) | Cited 19 times

Online Publication Date: 26 May 2010

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Molybdenum trioxide (MoO3) is commonly used as a buffer layer in organic electronic devices to improve hole-injection. However, stoichiometric MoO3 is an insulator, and adds a series resistance. Here it is shown that a MoO3 buffer layer can be reduced to form a metallic oxide buffer that exhibits more favorable energy-level alignment with N,N′-diphenyl-N,N′-bis-(1-naphthyl)-1-1′-biphenyl-4,4′-diamine (α-NPD) than does MoO3. This buffer layer thus provides the conductivity of a metal with the favorable energy alignment of an oxide. Photoemission shows the reduced oxide contains Mo4+ and Mo5+, with a metallic valence band structure similar to MoO2.
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73.61.Ng Insulators
71.20.Ps Other inorganic compounds
79.60.Bm Clean metal, semiconductor, and insulator surfaces
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Photochemical control of the carrier mobility in pentacene-based organic thin-film transistors

Marco Marchl, Andrej W. Golubkov, Matthias Edler, Thomas Griesser, Peter Pacher, Anja Haase, Barbara Stadlober, Maria R. Belegratis, Gregor Trimmel, and Egbert Zojer

Appl. Phys. Lett. 96, 213303 (2010); http://dx.doi.org/10.1063/1.3432672 (3 pages) | Cited 8 times

Online Publication Date: 26 May 2010

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We use a photoreactive interfacial layer of poly(endo,exo-bis(2-nitrobenzyl) bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylate) (PBHND) between the gate dielectric and the pentacene active layer to tune the effective hole mobility in organic thin film transistors over approximately one order of magnitude. This can be explained by the photoconversion of the PBHND layer changing its surface energy and thus strongly impacting pentacene growth. A linear relationship between the mobility and the grain size is observed.
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85.30.Tv Field effect devices
84.60.-h Direct energy conversion and storage
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Role of diffusion in two-dimensional bimolecular recombination

A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard

Appl. Phys. Lett. 96, 213304 (2010); http://dx.doi.org/10.1063/1.3435469 (3 pages) | Cited 3 times

Online Publication Date: 27 May 2010

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Experiments on carrier recombination in two-dimensional organic structures are often interpreted in the frame of the Langevin model with taking into account only the drift of the charge carriers in their mutual electric field. While this approach is well justified for three-dimensional systems, it is in general not valid for two-dimensional structures where the contribution of diffusion can play a dominant role. We study the two-dimensional Langevin recombination theoretically and find the critical concentration below which diffusion cannot be neglected. For typical experimental conditions, neglecting the diffusion leads to an underestimation of the recombination rate by several times.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
66.30.-h Diffusion in solids
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Distinct electronic switching behaviors of triphenylamine-containing polyimide memories with different bottom electrodes

Qisheng Liu, Kejian Jiang, Lihua Wang, Yongqiang Wen, Jingxia Wang, Ying Ma, and Yanlin Song

Appl. Phys. Lett. 96, 213305 (2010); http://dx.doi.org/10.1063/1.3431658 (3 pages) | Cited 5 times

Online Publication Date: 27 May 2010

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A synthetic polyimide poly[4,4′-bis(4-methloxytriphenylamine)-3,3′-biphenylenehexafluoro-isopropylidenediphthalimide] (MTPA-PI) was designed as a functional material for fabrication of memory devices, and two different switching behaviors were observed in the devices with different bottom electrode materials [indium tin oxide (ITO) or Al]. In an ITO/MTPA-PI/Al device, the memory could be switched on/off with the negative/positive voltage with the ON/OFF current ratios in the order of about 104, while in an Al/MTPA-PI/Al device, it shows different switching behaviors with much higher current ratios (up to 109) as compared with the ITO/MTPA-PI/Al device. The different switching mechanisms based on different bottom electrode devices were also discussed.
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82.45.Fk Electrodes
61.41.+e Polymers, elastomers, and plastics
84.30.Sk Pulse and digital circuits
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Dependence of Meyer–Neldel energy on energetic disorder in organic field effect transistors

Mujeeb Ullah, I. I. Fishchuk, A. Kadashchuk, P. Stadler, A. Pivrikas, C. Simbrunner, V. N. Poroshin, N. S. Sariciftci, and H. Sitter

Appl. Phys. Lett. 96, 213306 (2010); http://dx.doi.org/10.1063/1.3435477 (3 pages) | Cited 9 times

Online Publication Date: 28 May 2010

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Meyer–Neldel rule for charge carrier mobility was studied in C60-based organic field effect transistors (OFETs) fabricated at different growth conditions which changed the degree of disorder in the films. The energetic disorder in the films was found to correlate with a shift in the Meyer–Neldel energy, which is in excellent agreement with the predictions of a hopping-transport model for the temperature dependent OFET mobility in organic semiconductors with a Gaussian density-of-states (DOS). Using this model the width of the DOS was evaluated and it was found to decrease from 88 meV for the films grown at room temperature to 54 meV for films grown at 250 °C.
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85.30.Tv Field effect devices
81.05.Fb Organic semiconductors
81.15.Dj E-beam and hot filament evaporation deposition
68.55.ag Semiconductors
68.55.am Polymers and organics
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