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Applied Physics Letters / Volume 96 / Issue 22 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 221102 (2010); http://dx.doi.org/10.1063/1.3442912 (3 pages)

Strong coupling in a quantum dot micropillar system under electrical current injection

C. Kistner1, K. Morgener1, S. Reitzenstein1, C. Schneider1, S. Höfling1, L. Worschech1, A. Forchel1, P. Yao2, and S. Hughes2

1Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
2Department of Physics, Queen’s University, Kingston, Ontario K7L 3N6, Canada

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(Received 12 April 2010; accepted 11 May 2010; published online 1 June 2010)

Integrating In0.3Ga0.7As quantum dots (QDs) featuring a high oscillator strength into a high quality electrically contacted micropillar cavity enabled us to realize strong coupling under electrical carrier injection. In the micropillar cavity with a quality factor of 10 000 and a diameter of 1.9 μm, a vacuum Rabi splitting of 108 μeV was observed when an electrically excited QD exciton was tuned through resonance with the fundamental cavity mode by varying the temperature.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

excitons, gallium arsenide, III-V semiconductors, indium compounds, oscillator strengths, Q-factor, semiconductor quantum dots

PACS

  • 73.63.Kv

    Quantum dots

  • 78.67.Hc

    Quantum dots

  • 73.20.Mf

    Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

  • 73.21.La

    Quantum dots

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3442912

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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