Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

Choi, Suk; Kim, Hee Jin; Kim, Seong-Soo; Liu, Jianping; Kim, Jeomoh; Ryou, Jae-Hyun; Dupuis, Russell D.; Fischer, Alec M.; Ponce, Fernando A.

doi:doi:10.1063/1.3441373

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

Free-standing subwavelength metallic gratings for snapshot multispectral imaging

A mosaic of ten spectral filters has been fabricated in a single 20 mm2 membrane drilled by nanoslits and coated by a gold layer. The nanostructured core-shell gratings exhibit 70% average maximum transmission efficiency in 15% aperture area, which represents a fivefold enhancement compared to the geometrical transmission. This mosaic of bandpass filters regularly spaced in the 3–5 μm wavelength range is used to demonstrate real-time spectral imaging in a multichannel camera.

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.

InAlN electron-blocking layers (EBLs) are shown to improve the emission intensity and to mitigate the efficiency droop problem in III-nitride-based visible light-emitting diodes (LEDs). Using an In_0.18Al_0.82N EBL in blue LEDs, we have achieved a significant improvement in the electroluminescence emission intensity and a mitigated efficiency droop compared to similar LEDs without an EBL or with an Al_0.2Ga_0.8N EBL. This indicates that an In_0.18Al_0.82N EBL is more effective in electron confinement and reduces the efficiency droop possibly caused by carrier spill-over than conventional AlGaN EBLs.

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

aluminium compounds, electroluminescence, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, semiconductor devices

PACS

85.60.Jb

Light-emitting devices
85.60.-q

Optoelectronic devices
78.66.Fd

III-V semiconductors
78.60.Fi

Electroluminescence
85.30.De

Semiconductor-device characterization, design, and modeling
81.05.Ea

III-V semiconductors

ARTICLE DATA

Permalink

http://link.aip.org/link/doi/10.1063/1.3441373

PUBLICATION DATA

ISSN:

0003-6951 (print)

1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef

American Institute of Physics

For access to citing articles, you need to log in.

Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)