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Appl. Phys. Lett. 96, 221106 (2010); doi:10.1063/1.3446889 (3 pages)
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
(Received 16 April 2010; accepted 14 May 2010; published online 3 June 2010)
© 2010 American Institute of Physics
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