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Applied Physics Letters / Volume 96 / Issue 22 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 221106 (2010); http://dx.doi.org/10.1063/1.3446889 (3 pages)

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

J. Hader1, J. V. Moloney1, and S. W. Koch2

1Nonlinear Control Strategies Inc., 3542 N. Geronimo Ave., Tucson, Arizona 85705, USA and Optical Sciences Center, University of Arizona, Tucson, Arizona 85721, USA
2Department of Physics and Materials Sciences Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg, Germany

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(Received 16 April 2010; accepted 14 May 2010; published online 3 June 2010)

It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, semiconductor lasers

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3446889

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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