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Appl. Phys. Lett. 96, 221109 (2010); http://dx.doi.org/10.1063/1.3428960 (3 pages)

Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon

M. G. Tanner1, C. M. Natarajan1, V. K. Pottapenjara1, J. A. O’Connor1, R. J. Warburton1, R. H. Hadfield1, B. Baek2, S. Nam2, S. N. Dorenbos3, E. Bermúdez Ureña3, T. Zijlstra3, T. M. Klapwijk3, and V. Zwiller3

1Scottish Universities Physics Alliance and School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
2National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305, USA
3Kavli Institute for Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands

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(Received 10 February 2010; accepted 21 April 2010; published online 3 June 2010)

Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 85.25.Pb

    Superconducting infrared, submillimeter and millimeter wave detectors

  • 07.57.Kp

    Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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